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5962R9581304TXC

产品描述DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDFP14, CERAMIC, DFP-14
产品类别模拟混合信号IC    信号电路   
文件大小25KB,共2页
制造商Renesas(瑞萨电子)
官网地址https://www.renesas.com/
下载文档 详细参数 选型对比 全文预览

5962R9581304TXC概述

DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDFP14, CERAMIC, DFP-14

5962R9581304TXC规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码DFP
包装说明DFP,
针数14
Reach Compliance Codecompliant
模拟集成电路 - 其他类型SPDT
JESD-30 代码R-CDFP-F14
JESD-609代码e4
标称负供电电压 (Vsup)-15 V
信道数量1
功能数量2
端子数量14
标称断态隔离度40 dB
最大通态电阻 (Ron)75 Ω
最高工作温度125 °C
最低工作温度-55 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装形状RECTANGULAR
封装形式FLATPACK
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class T
座面最大高度2.92 mm
标称供电电压 (Vsup)15 V
表面贴装YES
最长断开时间450 ns
最长接通时间500 ns
技术CMOS
温度等级MILITARY
端子面层GOLD
端子形式FLAT
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
总剂量100k Rad(Si) V
宽度6.285 mm
Base Number Matches1

文档预览

下载PDF文档
HS-303RH-T
Data Sheet
July 1999
File Number
4602.1
Radiation Hardened
CMOS Dual SPDT Analog Switch
Intersil’s Satellite Applications
(SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The HS-303RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). This switch offers low-
resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
Flow
TM
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 10
5
RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-303 Series Analog
Switches
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low r
ON
. . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
• Low Operating Power . . . . . . . . . . 100µA (Max, Post Rad)
Pinouts
HS1-303RH-T (SBDIP), CDIP2-T14
TOP VIEW
NC
S3
D3
1
2
3
4
5
6
7
14 V+
13 S4
12 D4
11 D2
10 S2
9 IN2
8 V-
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-303RH-T
are contained in SMD 5962-95813.
A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
D1
S1
IN1
GND
HS9-303RH-T (FLATPACK) CDFP3-F14
TOP VIEW
1
NC
S3
D3
D1
S1
2
3
4
5
6
7
14
13
12
11
10
9
8
V+
S4
D4
D2
S2
IN2
V-
Ordering Information
ORDERING
NUMBER
5962R9581301TCC
5962R9581304TXC
PART
NUMBER
HS1-303RH-T
HS9-303RH-T
TEMP.
RANGE
(
o
C)
-55 to 125
-55 to 125
IN1
GND
NOTE:
Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.

5962R9581304TXC相似产品对比

5962R9581304TXC HS9-303RH-T 5962R9581301TCC HS1-303RH-T
描述 DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDFP14, CERAMIC, DFP-14 DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDFP14, CERAMIC, DFP-14 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP14, CERAMIC, DIP-14 DUAL 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, CDIP14, SIDE BRAZED, CERAMIC, DIP-14
零件包装代码 DFP DFP DIP DIP
包装说明 DFP, DFP, FL14,.3 DIP, DIP14,.3 DIP, DIP14,.3
针数 14 14 14 14
Reach Compliance Code compliant not_compliant unknown not_compliant
模拟集成电路 - 其他类型 SPDT SPDT SPDT SPDT
JESD-30 代码 R-CDFP-F14 R-CDFP-F14 R-CDIP-T14 R-CDIP-T14
JESD-609代码 e4 e0 e4 e0
标称负供电电压 (Vsup) -15 V -15 V -15 V -15 V
信道数量 1 1 1 1
功能数量 2 2 1 2
端子数量 14 14 14 14
标称断态隔离度 40 dB 40 dB 40 dB 40 dB
最大通态电阻 (Ron) 75 Ω 75 Ω 75 Ω 75 Ω
最高工作温度 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装代码 DFP DFP DIP DIP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK IN-LINE IN-LINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
筛选级别 MIL-PRF-38535 Class T MIL-PRF-38535 Class T MIL-PRF-38535 Class T MIL-PRF-38535 Class T
座面最大高度 2.92 mm 2.92 mm 5.08 mm 5.08 mm
标称供电电压 (Vsup) 15 V 15 V 15 V 15 V
表面贴装 YES YES NO NO
最长断开时间 450 ns 450 ns 450 ns 450 ns
最长接通时间 500 ns 500 ns 500 ns 500 ns
技术 CMOS CMOS CMOS CMOS
温度等级 MILITARY MILITARY MILITARY MILITARY
端子面层 GOLD Tin/Lead (Sn/Pb) GOLD Tin/Lead (Sn/Pb)
端子形式 FLAT FLAT THROUGH-HOLE THROUGH-HOLE
端子节距 1.27 mm 1.27 mm 2.54 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL
总剂量 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V
宽度 6.285 mm 6.285 mm 7.62 mm 7.62 mm
是否Rohs认证 不符合 不符合 - 不符合
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
厂商名称 - Renesas(瑞萨电子) Renesas(瑞萨电子) Renesas(瑞萨电子)
输出 - SEPARATE OUTPUT SEPARATE OUTPUT SEPARATE OUTPUT
封装等效代码 - FL14,.3 DIP14,.3 DIP14,.3
电源 - +-15 V +-15 V +-15 V
切换 - BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
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