Operating Temperature Range ......................... -40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
8-THIN WLP
Junction-to-Ambient Thermal Resistance (θ
JA
) .....87.71°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ..............NA°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
DD
= 10V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kΩ to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
= +25°C.) (Note 2)
PARAMETER
POWER SUPPLY
Supply Voltage Range
Power-Supply Rejection Ratio
Quiescent Current Per Amplifier
Power-Up Time
DC CHARACTERISTICS
Input Common-Mode Range
Common-Mode Rejection Ratio
Input Offset Voltage
Input Offset Voltage Drift (Note 3)
Input Bias Current (Note 3)
V
CM
CMRR
V
OS
TC V
OS
T
A
= +25ºC
I
B
-40ºC ≤ T
A
≤ +85ºC
-40ºC ≤ T
A
≤ +125ºC
Guaranteed by CMRR test
V
CM
= V
SS
- 0.05V T
A
= +25ºC
to V
DD
- 1.5V
-40ºC ≤ T
A
≤ +125ºC
T
A
= +25ºC
-40ºC ≤ T
A
≤ +125ºC
0.25
0.02
V
SS
- 0.05
94
90
50
600
800
2.5
2
15
75
pA
111
V
DD
- 1.5
V
dB
µV
µV/ºC
V
DD
PSRR
I
DD
t
ON
Guaranteed by PSRR
V
DD
= 2.7V to 20V, T
A
= +25ºC
V
CM
= 0V
-40ºC ≤ T
A
≤ +125ºC
R
LOAD
= infinity
T
A
= +25ºC
-40ºC ≤ T
A
≤ +125ºC
20
2.7
106
100
1.2
1.6
1.8
130
20
V
dB
mA
µs
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
R
LOAD
= 10kΩ to V
DD
/2, C
LOAD
= 20pF,
V
OUT
reaches V
DD
/2 to 1%
www.maximintegrated.com
Maxim Integrated
│
2
MAX40242
20V, Low Input Bias-Current,
Low-Noise, Dual Op Amp
Electrical Characteristics (continued)
(V
DD
= 10V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kΩ to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
= +25°C.) (Note 2)
PARAMETER
Input Offset Current (Note 3)
SYMBOL
T
A
= +25°C
I
OS
-40°C ≤ T
A
≤ +85°C
-40°C ≤ T
A
≤ +125°C
Open Loop Gain
Input Resistance
Output Short-Circuit Current (Note 3)
A
VOL
R
IN
250mV ≤ V
OUT
≤ V
DD
- 250mV
Differential
Common mode
To V
DD
or V
SS
Noncontinuous (1s)
V
OUT
- V
SS
, R
LOAD
= 10KΩ to V
DD
/2,
T
A
= +25°C
Output Voltage Low
V
OL
V
OUT
- V
SS
, R
LOAD
= 10KΩ to V
DD
/2,
-40°C < T
A
< 125°C
V
OUT
- V
SS
, R
LOAD
= 2KΩ to V
DD
/2,
T
A
= +25°C
V
OUT
- V
SS
, R
LOAD
= 2KΩ to V
DD
/2,
-40°C < T
A
< 125°C
47
T
A
= +25°C
-40°C ≤ T
A
≤ +125°C
134
129
50
200
95
11
15
25
60
85
20
26
37
mV
80
100
135
145
CONDITIONS
MIN
TYP
0.04
MAX
1
10
25
dB
MΩ
mA
pA
UNITS
mV
V
OUT
- V
SS
, R
LOAD
= 10KΩ to V
DD
/2,
T
A
= +25°C
V
OUT
- V
SS
, R
LOAD
= 10KΩ to V
DD
/2,
-40°C < T
A
< 125°C
V
OUT
- V
SS
, R
LOAD
= 2KΩ to V
DD
/2,
T
A
= +25°C
V
OUT
- V
SS
, R
LOAD
= 2KΩ to V
DD
/2,
-40°C < T
A
< 125°C
AC CHARACTERISTICS
Input Voltage-Noise Density
Input Voltage Noise
Input Current-Noise Density
Input Capacitance
Gain-Bandwidth Product
Phase Margin
Slew Rate
Large-Signal Bandwidth
Capacitive Loading
Crosstalk
I
N
C
IN
GBW
PM
SR
BW
C
LOAD
X
T
C
LOAD
= 20pF
A
V
= 1V/V, V
OUT
= 2VP-P, 10% to 90%
R
LOAD
= 10KΩ to V
DD
/2, C
LOAD
= 20pF,
A
V
= 1V/V
No sustained oscillation, A
V
= 1V/V
R
LOAD
= 2KΩ to V
DD
/2, C
LOAD
= 20pF,
V
OUT
= 5V
P-P
, f = 100kHz
e
n
f = 1kHz
0.1Hz ≤ f ≤ 10Hz
f = 1kHz
Output Voltage High
V
OH
5
1.6
0.3
4
10
60
8
1
200
-98
nV/√Hz
µV
P-P
pA/√Hz
pF
MHz
°
V/µs
MHz
pF
dB
www.maximintegrated.com
Maxim Integrated
│
3
MAX40242
20V, Low Input Bias-Current,
Low-Noise, Dual Op Amp
Electrical Characteristics (continued)
PARAMETER
Total Harmonic Distortion Plus Noise
SYMBOL
THD+N
(V
DD
= 10V, V
SS
= 0V, V
IN+
= V
IN-
= V
DD
/2, R
L
= 10kΩ to V
DD
/2, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are
at T
A
= +25°C.) (Note 2)
CONDITIONS
V
OUT
= 2VP-P,
A
V
= +1V/V
f = 1kHz
f = 20kHz
f = 400MHz
EMI Rejection Ratio
EMIRR
V
RF_PEAK
= 100mV
f = 800MHz
f = 1800MHz
f = 2400MHz
Settling Time
To 0.1%, V
OUT
= 2V step, A
V
= -1V/V
MIN
TYP
-124
-100
35
40
50
57
2
µs
dB
MAX
UNITS
dB
Note 2:
All devices are production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design.
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