CLY29-10P,CLY29-10P pdf中文资料,CLY29-10P引脚图,CLY29-10P电路-Datasheet-电子工程世界

CLY29-10P: 产品描述RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN; 产品类别分立半导体晶体管; 文件大小615KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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CLY29-10P概述

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN

CLY29-10P规格参数

参数名称	属性值
厂商名称	Infineon(英飞凌)
包装说明	FLANGE MOUNT, R-CDFM-F2
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
外壳连接	SOURCE
配置	SINGLE
最小漏源击穿电压	14 V
最大漏极电流 (Abs) (ID)	0.7 A
最大漏极电流 (ID)	0.7 A
FET 技术	METAL SEMICONDUCTOR
最高频带	C BAND
JESD-30 代码	R-CDFM-F2
JESD-609代码	e3
元件数量	1
端子数量	2
工作模式	DEPLETION MODE
最高工作温度	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最小功率增益 (Gp)	14 dB
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE
Base Number Matches	1

CLY29-10P相似产品对比

	CLY29-10P	CLY29-05P	CLY29-05S	CLY29-10ES	CLY29-00P	CLY29-00ES
描述	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-25, 3 PIN
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2
针数	3	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE	SOURCE
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	14 V	14 V	14 V	14 V	14 V	14 V
最大漏极电流 (Abs) (ID)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
最大漏极电流 (ID)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	C BAND	C BAND	C BAND	C BAND	C BAND	C BAND
JESD-30 代码	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
JESD-609代码	e3	e3	e3	e3	e3	e3
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
工作模式	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最小功率增益 (Gp)	14 dB	14 dB	14 dB	14 dB	13.5 dB	13.5 dB
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	1	1	1	1	1	-

CLY29-10P

CLY29-10P概述

CLY29-10P规格参数

CLY29-10P相似产品对比

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