CMPA801B030D
30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave
integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage
reactively matched amplifier design approach enabling very wide bandwidths to be achieved.
Typical Performance Over 8.0 - 11.0 GHz
(T
C
= 85˚C)
Parameter
Small Signal Gain
P
OUT
@ P
IN
= 27 dBm, 100 μs @ 10 %
Power Gain @ P
IN
= 27 dBm, 100 μs @ 10 %
PAE @ P
IN
= 27 dBm, 100 μs @ 10 %
8.0 GHz
31
37
19
41
8.5 GHz
30
39
19
42
9.0 GHz
27
37
19
43
10.0 GHz
25
28
18
34
11.0 GHz
25
29
18
36
Units
dB
W
dB
%
Features
Applications
•
•
•
•
er 2019
28 dB Small Signal Gain
40 W Typical P
SAT
Operation up to 28 V
High Breakdown Voltage
High Temperature Operation
Size 0.142 x 0.188 x 0.004 inches
•
•
•
•
•
Point to Point Radio
Communications
Test Instrumentation
EMC Amplifiers
Radar
•
•
Rev 0.1 – Octob
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)
Mounting Temperature (30 seconds)
1
Symbol
V
DSS
V
GS
T
STG
T
J
R
θJC
R
θJC
T
S
Rating
84
-10, +2
-55, +150
225
1.22
1.80
320
Units
V
DC
V
DC
˚C
˚C
˚C/W
˚C/W
˚C
Conditions
25˚C
25˚C
Pulse Width = 100
µs,
Duty Cycle = 10%, P
DISS
= 77 W
CW, 85˚C, P
DISS
= 77 W
P
DISS
= 77 W
Thermal Resistance, Junction to Case (packaged)
1
Note
1
Eutectic die attach using 80/20 AuSn solder mounted to a 40 mil thick CPC carrier.
Electrical Characteristics
(Frequency = 8.0 GHz to 11.0 GHz unless otherwise stated; T
C
= 25˚C)
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
1
Drain-Source Breakdown Voltage
RF Characteristics
2
Small Signal Gain
Input Return Loss
Output Return Loss
Power Output
Power Output
Power Output
Power Output
Power Output
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Output Mismatch Stress
S21
S11
S21
P
OUT
P
OUT
P
OUT
P
OUT
P
OUT
PAE
PAE
PAE
PAE
PAE
VSWR
–
–
–
–
–
–
–
–
–
–
–
–
–
–
27.0
-6.0
-7.0
41.9
51.5
45.4
40.8
38.8
42.7
47.9
50.2
40.7
41.0
5:1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
W
W
W
W
W
%
%
%
%
%
Y
V
DD
= 28 V, I
DQ
= 800 mA, Frequency 8.0 - 11.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, Frequency 8.0 - 11.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, Frequency 8.0 - 11.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 8.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 8.5 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 9.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 10.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 11.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 8.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 8.5 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 9.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 10.0 GHz
V
DD
= 28 V, I
DQ
= 800 mA, P
IN
= 27 dBm, Freq = 11.0 GHz
No damage at all phase angles, V
DD
= 28 V, I
DQ
= 800 mA, P
OUT
= 30 W
V
GS(TH)
V
GS(Q)
I
DS
V
BD
-3.8
–
9.5
84
-3.0
-2.7
13.2
–
-2.3
–
–
–
V
V
A
V
V
DS
= 10 V, I
D
= 28 mA
V
DD
= 28 V, I
DQ
= 800 mA
V
DS
= 6.0 V, V
GS
= 2.0 V
V
GS
= -8 V, I
D
= 28 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
Notes:
1
Scaled from PCM data.
2
All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%.
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA801B030D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
Die Dimensions (units in microns)
Overall die size 4780 x 3610 (+0/-50) microns, die thickness 100 (+/-10) micron.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad Number
1
2
3
4
5
6
7
8
9
10
Function
RF-IN
VG1_A
VG1_B
VD1_A
VD1_B
VG2_A
VG2_B
VD2_A
VD2_B
RF-Out
RF-Input pad. Matched to 50 ohm.
Gate control for stage 1. V
G
~ 2.0 - 3.5 V.
Gate control for stage 1. V
G
~ 2.0 - 3.5 V.
Drain supply for stage 1. V
D
= 28 V.
Drain supply for stage 1. V
D
= 28 V.
Gate control for stage 2A. V
G
~ 2.0 - 3.5 V.
Gate control for stage 2A. V
G
~ 2.0 - 3.5 V.
Drain supply for stage 2A. V
D
= 28 V.
Drain supply for stage 2B. V
D
= 28 V.
RF-Output pad. Matched to 50 ohm.
Description
Pad Size (microns)
190 x 165
110 x 110
110 x 110
110 x 110
110 x 110
110 x 110
110 x 110
274 x 140
274 x 140
150 x 150
Note
4
1,2
1,2
1
1
1,3
1,3
1
1
4
Notes:
1
Attach bypass capacitor to pads 2-9 per application circuit.
2
VG1_A and VG1_B are connected internally so it would be enough to connect either one for proper operation.
3
VG2_A and VG2_B are connected internally so it would be enough to connect either one for proper operation.
4
The RF Input and Output pad have a ground-signal-ground with a nominal pitch of 1 mil (25 um). The RF ground pads are 110 x
110 microns.
Die Assembly Notes:
•
•
•
•
•
•
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at
http://www.cree.com/RF/Document-Library
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
3
CMPA801B030D Rev 0.1
Block Diagram Showing Additional Capacitors for Operation Over 8.0 to 11.0 GHz
C2
C4
C10
Vd
C9
Vg
C1
C3
VG1_B
VD1_B
VG2_B
VD2_B
RF_In
1
2
1
2
RF_Out
VG1_A
VD1_A
VG2_A
VD2_A
C11
C5
C7
C6
C8
C12
Designator
C1,C2,C3,C4,C5,C6,C7,C8
C9,C10,C11,C12
Description
CAP, 51pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V, Ni/Au TERMI-
NATION
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V, Ni/Au TERMI-
NATION
Quantity
8
4
Notes:
1
The input, output and decoupling capacitors should be attached as close as possible to the die- typical
The MMIC die and capacitors should be connected with 2 mil gold bond wires.
distance is 5 to 10 mils with a maximum of 15 mils.
2
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
4
CMPA801B030D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
Typical Performance of the CMPA801B030D
Figure 1. - Small Signal Gain vs Frequency
Small Signal Gain vs Frequency
V
DD
=
VD = 28V, IDQ
0.8 A
28 V, I
DQ
=
= 0.8A
40
40
20
20
0
0
-20
S21
S11
S22
-40
8
9
10
Frequency (GHz)
11
12
-20
-40
Figure 2. - Output Power & Power Added Efficiency vs Frequency
Output Power and Power Added
= 100µs, 10% Duty
V
DD
= 28 V, I
DQ
= 0.8 A, P
IN
= 27 dBm, Pulse Width
Efficiency vs Frequency
Cycle, Tc = 85°C
VDD=28V, IDQ=0.8A, Pin=27dBm, 100µs @ 10%, Tc = 85°C
60
Output Power (dBm), Power Added Efficiency (%)
50
40
30
Pout
PAE
20
8
8.5
9
Frequency (GHz)
9.5
10
10.5
11
11.5
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
5
CMPA801B030D Rev 0.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
rfsales@cree.com
www.cree.com/rf
S11 (dB), S22 (dB)
S21 (dB)
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