BTA204W-800E
3Q Hi-Com Triac
28 March 2013
Product data sheet
1. General description
Planar passivated three quadrant guaranteed commutation triac in a SOT223 surface
mountable plastic package for use in motor control circuits or with other highly inductive
loads. This triac balances the requirements of commutation performance and gate
sensitivity and is intended for use with low power drivers, including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High immunity to false turn-on by dV/dt with sensitive gate
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Surface mountable package
3. Applications
•
•
•
General purpose motor controls
Small loads in washing machines
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
sp
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
10
1
Unit
V
A
A
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SO
T2
23
NXP Semiconductors
BTA204W-800E
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 9
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 9
Min
-
-
-
Typ
-
-
-
Max
10
10
10
Unit
mA
mA
mA
Static characteristics
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
T1
T2
G
mb
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
1
2
3
Simplified outline
4
Graphic symbol
T2
sym051
T1
G
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA204W-800E
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
sp
≤ 108 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
16.7 ms
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
I t
BTA204W-800E
Conditions
Min
-
-
-
-
-
Max
800
1
11
10
0.5
Unit
V
A
A
A
2
2
I t for fusing
2
t
p
= 10 ms; SIN
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A s
© NXP B.V. 2013. All rights reserved
Product data sheet
28 March 2013
2 / 13
NXP Semiconductors
BTA204W-800E
3Q Hi-Com Triac
Symbol
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
6
I
T(RMS )
(A)
5
4
Parameter
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
Conditions
I
T
= 1.5 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Min
-
-
-
Max
100
2
5
0.5
150
125
003aak841
Unit
A/µs
A
W
W
°C
°C
over any 20ms period
-
-40
-
003a a k837
1.25
I
T(RMS)
(A)
1.00
108 °C
0.75
3
0.50
2
1
0
10
-2
0.25
10
-1
1
10
s urge duration (s)
0
-50
0
50
100
T
sp
(°C)
150
f = 50 Hz; T
sp
= 108 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
1.6
P
tot
(W)
1.2
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
Fig. 2.
RMS on-state current as a function of solder
point temperature; maximum values
003aak839
101
T
sp(max)
(°C)
α = 180°
120°
90°
60°
30°
107
0.8
113
0.4
119
0
0
0.25
0.5
0.75
1.0
I
T(RMS)
(A)
125
1.25
α = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA204W-800E
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© NXP B.V. 2013. All rights reserved
Product data sheet
28 March 2013
3 / 13
NXP Semiconductors
BTA204W-800E
3Q Hi-Com Triac
10
3
I
T
I
TSM
(A)
003aak840
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
15
I
TSM
(A)
10
003aak838
5
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
8. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to solder
point
thermal resistance
from junction to
ambient
Conditions
full cycle or half cycle;
Fig. 8
Min
-
Typ
-
Max
15
Unit
K/W
R
th(j-a)
in free air; printed circuit board
mounted: minimum pad area;
Fig. 6
in free air; printed circuit board
mounted: minimum footprint;
Fig. 7
All information provided in this document is subject to legal disclaimers.
-
-
70
156
-
-
K/W
K/W
BTA204W-800E
© NXP B.V. 2013. All rights reserved
Product data sheet
28 March 2013
4 / 13
NXP Semiconductors
BTA204W-800E
3Q Hi-Com Triac
3.8 min
36
1.5
min
18
60
9
4.6
4.5
6.3
1.5
min
(3×)
1.5
min
4.6
2.3
10
7
15
50
001aab509
001aab508
All dimensions are in mm
Fig. 7.
Minimum footprint SOT223
All dimensions are in mm
Printed circuit board:
FR4 epoxy glass (1.6 mm thick), copper laminate
(35 um thick)
Fig. 6.
Printed circuit board pad area: SOT223
10
2
Z
th(j-sp)
(K/W)
10
003aac210
1
10
-1
P
10
-2
t
p
t
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 8.
Transient thermal impedance from junction to solder point as a junction of pulse width
9. Characteristics
Table 6.
Symbol
I
GT
Characteristics
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 9
BTA204W-800E
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Min
-
Typ
-
Max
10
Unit
mA
Static characteristics
Product data sheet
28 March 2013
5 / 13
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