Advance Technical Information
Trench Gate HiperFET
N-Channel Power MOSFET
FMM60-02TF
3
3
5
5
V
DSS
I
D25
T1
R
DS(on)
t
rr(typ)
= 200V
= 33A
≤
40mΩ
Ω
= 82ns
Phase Leg Topology
4
4
T2
1
1
2
2
ISOPLUS i4-Pak
TM
Symbol
T
J
T
JM
T
stg
V
ISOLD
T
L
T
SOLD
F
C
Test Conditions
Maximum Ratings
-55 ... +150
150
-55 ... +150
°C
°C
°C
~V
°C
°C
N/lb.
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
Low Q
G
Low Drain-to-Tab capacitance
Low package inductance
1
Isolated Tab
50/60H
Z
, RMS, t = 1min, leads-to-tab
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
2500
300
260
20..120 / 4.5..27
5
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
T
C
= 25°C
Maximum Ratings
200
200
±
30
33
150
5
1
10
125
V
V
V
A
A
A
J
V/ns
W
Advantages
Low gate drive requirement
High power density
Fast intrinsic rectifier
Low drain to ground capacitance
Fast switching
Applications
DC and AC motor drives
UPS, solar and wind power inverters
Synchronous rectifiers
Multi-phase DC to DC converters
Industrial battery chargers
Switching power supplies
Symbol
C
P
d
S
,d
A
d
S
,d
A
Weight
Test Conditions
Coupling capacitance between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
Characteristic Values
Min.
Typ.
Max.
40
1.7
5.5
9
pF
mm
mm
g
© 2008 IXYS CORPORATION, All rights reserved
DS100048(09/08)
FMM60-02TF
Symbol
Test Conditions
2
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
Test Conditions
3
V
GS
= 0V
Repetitive, pulse width limited by T
JM
I
F
= 60A, V
GS
= 0V, Note 1
I
F
= 25A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
82
15.3
0.63
0.15
V
GS
= 10V, V
DS
= 0.5
V
DSS
, I
D
= 30A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 V
DSS
, I
D
= 30A
R
G
= 5Ω (External)
V
GS
= 0V, V
DS
= 25 V, f = 1 MHz
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 250μA
V
GS
=
±20
V, V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 30A, Note 1
V
DS
= 10V, I
D
= 60A, Note 1
40
T
J
= 125°C
32
62
3700
520
37
39
46
75
42
90
33
21
Characteristic Values
Min.
Typ.
Max.
200
2.5
4.5
±
200
V
V
nA
ISOPLUS i4-Pak
TM
Outline
5
μA
250
μA
40 mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.0
°C/W
°C/W
Ref: IXYS CO 0077 R0
Characteristic Values
T
J
= 25°C unless otherwise specified)
Min. Typ.
Max.
33
150
1.5
A
A
V
ns
A
μC
Note 1: Pulse test, t
≤
300μs, duty cycle, d
≤
2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
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