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1N3823CUR-1TRE3

产品描述Zener Diode, 3.9V V(Z), 2%, 1.5W,
产品类别分立半导体    二极管   
文件大小236KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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1N3823CUR-1TRE3概述

Zener Diode, 3.9V V(Z), 2%, 1.5W,

1N3823CUR-1TRE3规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codecompli
ECCN代码EAR99
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗9 Ω
元件数量1
最高工作温度175 °C
最大功率耗散1.5 W
标称参考电压3.9 V
表面贴装YES
最大电压容差2%
工作测试电流64 mA
Base Number Matches1

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1N3821UR-1 thru 1N3830AUR-1, e3 or
MLL3821 thru MLL3830A, e3
SCOTTSDALE DIVISION
LEADLESS GLASS ZENER DIODES
DESCRIPTION
This surface mountable zener diode series is similar to the lower voltage
1N3821 thru 1N3830 JEDEC registration except it is in a surface mount
DO-213AB package outline. It is an ideal selection for applications of high
density and low parasitic requirements. Due to its glass hermetic qualities
and enhanced metallurgical bonded internal construction, it is also well
suited for high reliability applications. This can be acquired by a source
control drawing (SCD), or simply by ordering device types with a MQ, MX
or MV prefix for equivalent screening to JAN, JANTX or JANTXV
respectively.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AB
FEATURES
Leadless package for surface mount equivalent to
1N3821 thru 1N3830A.
Ideal for high-density mounting
Lower voltage selections of 3.3 V to 7.5 V
Hermetically sealed, double-slug glass construction
Metallurgically enhanced contact construction
Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, and JANTXV with MQ, MX
or MV prefixes respectively for part numbers, e.g.
MX1N3821AUR-1, MV1N3828AUR-1, etc.
Axial lead “thru-hole” DO-13 packages per JEDEC
registration available as 1N3821A thru 1N3830A (see
separate data sheet with MIL-PRF-19500/115
qualification)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Leadless package for surface mounting
Tight voltage tolerances available
Ideal for high-density mounting
Metallurgically enhanced internal contact design
for greater reliability and lower thermal resistance
Nonsensitive to ESD
Hermetically sealed glass package
Specified capacitance (see Figure 2)
Inherently radiation hard as described in
Microsemi MicroNote 050
MAXIMUM RATINGS
Power dissipation at 25
º
C: 1.5 watts (also see derating
in Figure 1).
º
º
Operating and Storage temperature: -65 C to +175 C
Thermal Resistance: 40
º
C/W junction to end cap, or
120
º
C/W junction to ambient when mounted on FR4 PC
board (1 oz Cu) with recommended footprint (see last
page)
Steady-State Power: 1.50 watts at end-cap
temperature T
EC
< 115
o
C, or 1.25 watts at T
A
= 25
º
C
when mounted on FR4 PC board and recommended
footprint as described for thermal resistance (also see
Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
Solder Temperatures: 260
º
C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass MELF package
TERMINALS: Tin-Lead (SN/Pb) or RoHS
compliant annealed matte-Tin (Sn) plating
solderable per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band. Diode
to be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-1-
A with 12 mm tape, 1500 per 7 inch reel or 5000
per 13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
1N3821UR-1 thru
1N3830AUR-1,e3 or
MLL3821 thru MLL3830A,e3
hru
Copyright
©
2006
3-12-2006 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
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