T-1
3
/
4
(5 mm) Precision Optical
Performance AlInGaP LED Lamps
Technical Data
SunPower Series
HLMP-EL57
HLMP-EL55
HLMP-EH57
HLMP-EH55
HLMP-EG57
HLMP-EG55
Features
• Well Defined and Smooth
Spatial Radiation Patterns
• Wide Viewing Angle
• Tinted Diffused Lamp
• High Luminous Output
• Colors:
590/592 nm Amber
615/617 nm Reddish-Orange
626/630 nm Red
• High Operating Temperature:
T
JLED
= +130
°
C
• Superior Resistance to
Moisture
Applications
• Traffic Management:
Variable Message Signs
Traffic Management Signs
• Commercial Indoor/Outdoor
Advertising:
Signs
Marquees
Passenger Information
• Automotive:
Exterior and Interior Lights
Description
These Precision Optical Perform-
ance AlInGaP LEDs provide
superior light output for
excellent readability in sunlight
and are extremely reliable.
AlInGaP LED technology
provides extremely stable light
output over long periods of time.
Precision Optical Performance
lamps utilize the aluminum
indium gallium phosphide
(AlInGaP) technology.
These LED lamps are tinted,
diffused, T-1
3
/
4
packages
incorporating second generation
optics producing well defined
radiation patterns at specific
viewing cone angles.
Benefits
• Viewing Angles Match Traffic
Management Sign
Requirements
• Colors Meet Automotive
Specifications
• Superior Performance in
Outdoor Environments
• Suitable for Autoinsertion
onto PC Boards
There are two families of amber,
red, and red-orange lamps;
AlInGaP and the higher
performance AlInGaP II.
The high maximum LED
junction temperature limit of
+130° C enables high
temperature operation in bright
sunlight conditions.
These lamps are available in two
package options to give the
designer flexibility with device
mounting.
2
Part Numbering System
HLMP - x x xx - x x x xx
Mechanical Options
00: Bulk Packaging
DD: Ammo Pack
Color Bin Selections
0: No color bin limitation
4: Amber color bin 4 only
K: Amber color bins 2 and 4 only
Maximum Intensity Bin
Minimum Intensity Bin
Viewing Angle & Lead Stand Offs
55: 55 deg without lead stand offs; AlInGaP
57: 55 deg without lead stand offs; AlInGaP II
Color
D: 630 nm Red
G: 626 nm Red
H: 615/617 nm Red-Orange
L: 590/592 Amber
Package
E: 5 mm Round
Device Selection Guide (AlInGaP)
Typical
Viewing
Angle
2θ
1
/
2
(Deg.)
[4]
55°
Color and
Dominant
Wavelength
(nm), Typ.
[3]
Amber 590
Red-Orange 615
Red 626
Lamps Without Standoffs
on Leads
(Outline Drawing A)
HLMP-EL55-GK000
HLMP-EH55-GK000
HLMP-EG55-GK000
Luminous
Intensity Iv (mcd)
[1,2]
@20 mA
Min.
Max.
140
140
140
400
400
400
Device Selection Guide (AlInGaP II)
Typical
Viewing
Angle
2θ
1
/
2
(Deg.)
[4]
55°
Color and
Dominant
Wavelength
(nm), Typ.
[3]
Amber 592
Red-Orange 617
Red 630
Lamps Without Standoffs
on Leads
(Outline Drawing A)
HLMP-EL57-LP000
HLMP-EH57-LP000
HLMP-ED57-LP000
Luminous
Intensity Iv (mcd)
[1,2]
@20 mA
Min.
Max.
400
400
400
1150
1150
1150
Notes:
1. The luminous intensity is measured on the mechanical axis of the lamp package.
2. The optical axis is closely aligned with the package mechanical axis.
3. The dominant wavelength,
λ
d
, is derived from the CIE Chromaticity Diagram and represents the color of the lamp.
4.
θ
1/2
is the off-axis angle where the luminous intensity is one half the on-axis intensity.
3
Package Dimensions
5.00
±
0.20
(0.197
±
0.008)
1.14
±
0.20
(0.045
±
0.008)
8.71
±
0.20
(0.343
±
0.008
2.35 (0.093)
MAX.
31.60
(1.244) MIN.
0.70 (0.028)
MAX.
CATHODE
LEAD
1.00 MIN.
(0.039)
0.50
±
0.10 SQ. TYP.
(0.020
±
0.004)
CATHODE
FLAT
5.80
±
0.20
(0.228
±
0.008)
2.54
±
0.38
(0.100
±
0.015)
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS (INCHES).
2. LEADS ARE MILD STEEL, SOLDER DIPPED.
3. TAPERS SHOWN AT TOP OF LEADS (BOTTOM OF LAMP PACKAGE) INDICATE AN
EPOXY MENISCUS THAT MAY EXTEND ABOUT 1 mm (0.040 in.) DOWN THE LEADS.
4. RECOMMENDED PC BOARD HOLE DIAMETERS:
LAMP PACKAGE WITHOUT STAND-OFFS: FLUSH MOUNTING AT BASE OF
LAMP PACKAGE = 1.143/1.067 (0.044/0.042).
4
Absolute Maximum Ratings at T
A
= 25°C
DC Forward Current
[1,2,3]
..................................................................50 mA
Peak Pulsed Forward Current
[2,3]
................................................. 100 mA
Average Forward Current
[3]
.............................................................30 mA
Reverse Voltage (I
R
= 100
µA)
................................................................ 5 V
LED Junction Temperature .............................................................. 130° C
Operating Temperature .................................................. –40° C to +100° C
Storage Temperature ...................................................... –40° C to +120° C
Through-the-Wave Solder Temperature ................ 250° C for 3 seconds
[1.59 mm (0.060 in.) below body]
Notes:
1. Derate linearly as shown in Figure 4.
2. For long term performance with minimal light output degradation, drive currents
between 10 mA and 30 mA are recommended. For more information on recommended
drive conditions, please refer to Application Brief I-024 (5966-3087E).
3. Please contact your Agilent Technologies sales representative about operating currents
below 10 mA.
Electrical/Optical Characteristics at T
A
= 25°C
Parameter
Forward Voltage
Amber (λ
d
= 590 nm)
Amber (λ
d
= 592 nm)
Red-Orange (λ
d
= 615 nm)
Red-Orange (λ
d
= 617 nm)
Red (λ
d
= 626 nm)
Red (λ
d
= 630 nm)
Reverse Voltage
Peak Wavelength
Amber (λ
d
= 590 nm)
Amber (λ
d
= 592 nm)
Red-Orange (λ
d
= 615 nm)
Red-Orange (λ
d
= 617 nm)
Red (λ
d
= 626 nm)
Red (λ
d
= 630 nm)
Spectral Halfwidth
Symbol
V
F
Min.
Typ.
2.02
2.15
1.94
2.08
1.90
2.00
20
592
594
621
623
635
639
∆λ
1/2
17
nm
Max.
2.4
2.4
2.4
2.4
2.4
2.4
V
nm
I
R
= 100
µA
Peak of Wavelength of
Spectral Distribution
at I
F
= 20 mA
Units
V
Test Conditions
I
F
= 20 mA
V
R
λ
PEAK
5
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
[1]
Amber (λ
d
= 590 nm)
Amber (λ
d
= 592 nm)
Red-Orange (λ
d
= 615 nm)
Red-Orange (λ
d
= 617 nm)
Red (λ
d
= 626 nm)
Red (λ
d
= 630 nm)
τ
s
C
Rθ
J-PIN
η
v
20
40
240
ns
pF
°C/W
lm/W
480
500
260
235
150
155
Wavelength Width at
Spectral Distribution
1
/
2
Power Point at
I
F
= 20 mA
Exponential Time
Constant, e
-t/τs
V
F
= 0, f = 1 MHz
LED Junction-to-Cathode
Lead
Emitted Luminous
Power/Emitted Radiant
Power
Note:
1. The radiant intensity, I
e
, in watts per steradian, may be found from the equation I
e
= I
v
/η
v
, where I
v
is the luminous intensity in candelas and
η
v
is
the luminous efficacy in lumens/watt.
5
1.0
AMBER
RED-ORANGE
RED
RELATIVE INTENSITY
0.5
0
500
550
600
WAVELENGTH – nm
650
700
Figure 1. Relative Intensity vs. Peak Wavelength.
100
90
RELATIVE LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
3.0
50
80
70
CURRENT – mA
I
F
– FORWARD CURRENT – mA
2.5
2.0
1.5
1.0
0.5
0
40
Rθ
JA
= 585° C/W
30
Rθ
JA
= 780° C/W
20
10
0
60
50
40
30
20
10
0
1.0
1.5
RED
AMBER
2.0
2.5
3.0
0
20
40
60
0
20
40
60
80
100
V
F
– FORWARD VOLTAGE – V
I
F
– DC FORWARD CURRENT – mA
T
A
– AMBIENT TEMPERATURE –
°C
Figure 2. Forward Current vs. Forward
Voltage.
Figure 3. Relative Luminous Intensity vs.
Forward Current.
Figure 4. Maximum Forward Current vs.
Ambient Temperature. Derating Based on
T
JMAX
= 130°C.
100
90
RELATIVE INTENSITY – %
80
70
60
50
40
30
20
10
0
-100
-80
-60
-40
-20
0
20
40
60
80
100
θ
– ANGULAR DISPLACEMENT – DEGREES
Figure 5. Representative Spatial Radiation Pattern for 55° Viewing Angle Lamps.
Microchip MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
