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IRG4CC50SBPBF: 产品描述600V, N-CHANNEL IGBT, 6 INCH, WAFER; 产品类别分立半导体晶体管; 文件大小123KB，共1页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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IRG4CC50SBPBF概述

600V, N-CHANNEL IGBT, 6 INCH, WAFER

IRG4CC50SBPBF规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
其他特性	STANDARD SPEED
集电极-发射极最大电压	600 V
配置	SINGLE
JESD-30 代码	O-XUUC-N
元件数量	1
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	NOT SPECIFIED
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	40
晶体管元件材料	SILICON
Base Number Matches	1

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PD- 91829

IRG4CC50SB

IRG4CC50SB IGBT Die in Wafer Form

600 V

Size 5

Standard Speed

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

CE (on)

(BR)CES

GE(th)

CES

GES

Description

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Guaranteed (Min/Max)

4.5V Max.

600V Min.

3.0V Min., 6.0V Max.

250 µA Max.

± 1.1 µA Max.

Test Conditions

= 10A, T

= 25°C, V

= 15V

= 25°C, I

CES

= 250µA, V

= 0V

= V

, T

=25°C, I

=250µA

= 25°C, V

= 600V

= 25°C, V

= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Wafer Diameter:

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRG4PC50S

Cr-NiV-Ag ( 1kA-2kA-.2.5kA )

99% Al, 1% Si (4 microns)

0.257" x 0.260"

150mm, with std. < 100 > flat

.015" + / -.003"

01-5226

100 Microns

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Die Outline

www.irf.com

12/3/98

IRG4CC50SBPBF相似产品对比

	IRG4CC50SBPBF
描述	600V, N-CHANNEL IGBT, 6 INCH, WAFER
是否Rohs认证	符合
包装说明	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant
其他特性	STANDARD SPEED
集电极-发射极最大电压	600 V
配置	SINGLE
JESD-30 代码	O-XUUC-N
元件数量	1
封装主体材料	UNSPECIFIED
封装形状	ROUND
封装形式	UNCASED CHIP
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	YES
端子面层	NOT SPECIFIED
端子形式	NO LEAD
端子位置	UPPER
处于峰值回流温度下的最长时间	40
晶体管元件材料	SILICON
Base Number Matches	1

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