PD -94313
IRG4MC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
•
Eletrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
Ceramic eyelets
C
Fast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) max
=1.7V
@V
GE
= 15V, I
C
= 15A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
➀
Clamped Inductive Load Current
➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
600
28
15
112
112
± 20
75
30
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
R thJC
Junction-to-Case
Min Typ Max Units
—
—
1.67
°C/W
Test Conditions
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1
9/10/01
IRG4MC30F
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600 –––
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
S
18 –––
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage ––– 0.63
––– –––
V
CE(ON)
Collector-to-Emitter Saturation Voltage
––– –––
––– –––
V
GE(th)
Gate Threshold Voltage
3.0 –––
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -11
g
fe
Forward Transconductance
T
6.1 –––
––– –––
I
CES
Zero Gate Voltage Collector Current
––– –––
I
GES
Gate-to-Emitter Leakage Current
––– –––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 1.0 mA
–––
V
V
GE
= 0V, I
C
= 1.0 A
––– V/°C V
GE
= 0V, I
C
= 1.0 mA
V
GE
= 15V
1.7
I
C
= 15A
2.2
V
I
C
= 28A
See Fig.2, 5
2.7
I
C
= 15A , T
J
= 125°C
6.0
V
CE
= V
GE
, I
C
= 1.0 mA
––– mV/°C V
CE
= V
GE
, I
C
= 250 µA
–––
S
V
CE
≥
15V, I
C
= 15A
50
V
GE
= 0V, V
CE
= 480V
µA
1000
V
GE
= 0V, V
CE
= 480V, T
J
= 125°C
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
ts
t
d(on)
t
r
t
d(off)
t
r
E
ts
L
C
+L
E
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Rise Time
Total Switching Loss
Total Inductance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
54
I
C
= 15A
12
nC V
CC
= 300V
See Fig. 8
24
V
GE
= 15V
42
T
J
= 25°C
30
I
C
= 15A, V
CC
= 480V
ns
300
V
GE
= 15V, R
G
= 7.5Ω
300
Energy losses include "tail"
2.0
mJ See Fig. 10, 11, 13, 14
25
T
J
= 125°C,
20
ns
I
C
= 15A, V
CC
= 480V
450
V
GE
= 15V, R
G
= 7.5Ω
550
Energy losses include "tail"
3.0
mJ See Fig. 13, 14
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
––– 1100 –––
V
GE
= 0V
––– 74 –––
pF
V
CC
= 30V
See Fig. 7
––– 14 –––
ƒ = 1.0MHz
Typ.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
C
ies
C
oes
C
res
Notes:
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
S
Pulse width
≤
80µs; duty factor
≤
0.1%.
T
Pulse width 5.0µs, single shot.
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 100µH, R
G
= 7.5Ω,
(See fig. 13a)
2
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IRG4MC30F
40
Square wave:
60% of rated
voltage
Triangular wave:
30
Load Current ( A )
Ideal diodes
Clamp voltage:
80% of rated
20
10
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 19W
0.1
1
10
100
0
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000
I
C
, Collector-to-Emitter Current (A)
100
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150
°
C
10
10
T
J
= 150
°
C
GE
T
J
= 25
°
C
V
= 15V
20µs PULSE WIDTH
1
10
T
J
= 25
°
C
V
= 50V
5µs PULSE WIDTH
CC
5
10
15
20
1
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4MC30F
30
2.5
VGE = 15V
80µs PULSE WIDTH
Maximum DC Collector Current(A)
25
VCE , Collector-to Emitter Voltage (V)
IC = 30A
20
2.0
15
IC = 15A
10
1.5
IC = 7.5A
5
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T J , Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D =t
1
/ t
2
2. Peak T = P
DM
x Z
thJC
+ T
C
J
0.1
0.001
0.01
1
P
DM
t
1
t
2
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4MC30F
2000
V
GE
, Gate-to-Emitter Voltage (V)
1600
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
=
300V
400V
I
C
= 15A
16
C, Capacitance (pF)
C
ies
1200
12
800
8
C
oes
400
4
C
res
0
1
10
100
0
0
10
20
30
40
50
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.55
VCC = 480V
VGE = 15V
100
RG = 7.5Ω
VGE = 15V
Total Switching Losses (mJ)
1.50
Total Switching Losses (mJ)
TJ = 25°C
I C = 15A
VCC = 480V
10
IC = 30A
IC = 15A
IC = 7.5A
1.45
1
1.40
1.35
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R G, Gate Resistance (
Ω
)
T J, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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