PD -91418B
IRGMH40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
•
•
•
•
•
•
Electrically Isolated and Hermetically Sealed
Simple Drive Requirements
Latch-proof
Fast Speed operation 3 kHz - 8 kHz
High operating frequency
Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
V
CES
= 1200V
G
E
V
CE(on) max
= 3.6V
@V
GE
= 15V, I
C
= 13A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at the
same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current
applications.
The performance of various IGBTs varies greatly with frequency. Note that IR now
provides the designer with a speed benchmark (f
Ic/2
, or the "half-current frequency "),
as well as an indication of the current handling capability of the device.
TO-254AA
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
➀
Clamped Inductive Load Current
➁
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Max.
1200
13
48
24
48
± 20
96
36
-55 to + 150
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Units
V
A
V
W
°C
g
Thermal Resistance
Parameter
R thJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
0.21
—
1.3
—
48
°C/W
Test Conditions
For footnotes refer to the last page
www.irf.com
1
02/20/02
IRGMH40F
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 –––
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
➂
17 –––
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage –––
1.1
––– 2.4
V
CE(ON)
Collector-to-Emitter Saturation Voltage
––– 3.1
––– 2.6
V
GE(th)
Gate Threshold Voltage
3.0 –––
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage ––– -11
g
fe
Forward Transconductance
T
5.0 –––
––– –––
I
CES
Zero Gate Voltage Collector Current
––– –––
I
GES
Gate-to-Emitter Leakage Current
––– –––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 250 µA
–––
V
V
GE
= 0V, I
C
= 1.0 A
––– V/°C V
GE
= 0V, I
C
= 1.0 mA
V
GE
= 15V
3.6
I
C
= 13A
–––
I
C
= 24A
See Fig.2, 5
V
–––
I
C
= 13A , T
J
= 125°C
5.5
V
CE
= V
GE
, I
C
= 250 µA
––– mV/°C V
CE
= V
GE
, I
C
= 250 µA
–––
S
V
CE
≥
15V, I
C
= 13A
100
V
GE
= 0V, V
CE
= 960V
µA
1200
V
GE
= 0V, V
CE
= 960V, T
J
= 125°C
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
C
+L
E
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Total Inductance
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
84
I
C
= 13A
18
nC V
CC
= 400V
See Fig. 8
30
V
GE
= 15V
–––
I
C
= 13A, V
CC
= 960V
–––
Energy losses include "tail"
ns
–––
See Fig. 9, 10, 14
–––
–––
mJ
–––
4.7
–––
T
J
= 125°C
–––
I
C
= 13A, V
CC
= 960V
ns
–––
V
GE
= 15V, R
G
= 10Ω
–––
Energy losses include "tail"
–––
mJ See Fig. 11, 14
–––
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
––– 1400 –––
V
GE
= 0V
––– 82 –––
pF
V
CC
= 30V
See Fig. 7
––– 17 –––
ƒ = 1.0MHz
Typ.
56
12
20
25
14
270
270
0.5
2.6
3.1
25
14
450
650
7.5
6.8
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
www.irf.com
IRGMH40F
30
F or b o th :
T ria n g u la r w av e :
25
Load C urre nt (A)
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T s in k = 9 0 ° C
G a te d ri ve a s s p e c ifi e d
P o w e r D is s ip a tio n = 2 3 W
20
S q u a re w a v e :
15
6 0 % o f ra ted
v o lta g e
C la m p vo lta g e:
8 0 % o f ra te d
10
5
Id e a l d io d e s
0
0.1
1
10
A
100
f, Fre q u e n cy (k H z )
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
1000
1000
I
C
, C o llector-to-Em itter Cu rrent (A)
I
C
, C ollec to r-to -E m itte r C u rren t (A )
VGS
TOP
20V
15V
10V
7.0V
BOTTOM 6.0V
VGS
20V
15V
10V
7.0V
BOTTOM 6.0V
TOP
100
100
10
10
6 .0 V
1
1
6 .0 V
20 µ s P U LS E W ID TH
T
C
= 2 5°C
1
10
0.1
A
100
0.1
1
10
20 µ s P U LS E W ID TH
T
C
= 1 50 °C
A
100
V
CE
, C ollector-to-Em itter Vo ltag e (V)
V
CE
, C ollector-to-Em itter Vo ltag e (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRGMH40F
24
4.0
V
CE
, C olle ctor-to-E m itter V olta ge (V )
M axim um D C C ollector C u rren t (A )
V
G E
= 1 5V
V
GE
= 15V
8 0 µ s P UL S E W ID TH
I
C
= 2 6 A
20
3.5
16
3.0
12
2.5
I
C
= 13 A
8
2.0
I
C
= 6 .5 A
1.5
4
0
25
50
75
100
125
A
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, C ase Tem p era tu re (°C )
T
C
, C ase Tem pe ra tu re (°C )
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
T herm al R es pon se (Z
thJ C
)
1
D = 0.5 0
0.20
0.10
0.1
0 .05
0 .02
0 .01
SING L E P U LS E
(T H ER M A L R E SP O NS E)
0.01
0.00001
0.0001
0.001
0.01
P
D M
t
1
t2
N o te s:
1 . D u ty fa c to r D = t
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
A
1
0.1
t
1
, Re ctan gular Pulse D u ration (se c)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRGMH40F
2500
20
2000
V
G E
, G ate-to-E m itter Vo ltag e (V)
A
V
GE
=
C
ie s
=
C
re s
=
C
oes
=
0V ,
f = 1M H z
C
ge
+ C
gc
, C
c e
S H O R T E D
C
gc
C
ce
+ C
gc
V
CE
= 400V
I
C
= 13A
16
C , C apa cita nce (pF )
C
ie s
1500
12
1000
C
oes
8
500
4
C
re s
0
1
10
0
0
10
20
30
40
50
A
60
100
V
C E
, C o llec to r-to -E m itte r V olta ge (V )
Q
g
, To ta l G a te C h a rg e (n C )
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.4
100
T otal Sw itc hing Los se s (m J )
To ta l S w itchin g Los ses (m J)
V
CC
V
GE
T
C
I
C
= 960V
= 15V
= 2 5 °C
= 13A
R
G
= 10
Ω
V
G E
= 1 5V
V
C C
= 9 60 V
I
C
= 26 A
3.3
10
I
C
= 1 3 A
I
C
= 6 .5 A
3.2
1
3.1
3.0
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
100
120 140
A
160
R
G
, G a te R e sis ta n c e (
Ω
)
T
C
, Ca se Tem perature (°C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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