Internationa
IOR Rectifier
HEXFET® Power M O S F E T
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
P-Channel
175°C Operating Temperature
Fast Switching
Lead-Free
PD-95919
IRFD9120PbF
•
•
•
•
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The 4-pin DIP package is a low cost machine-insertable case style which can
be stacked in multiple combinations on standard 0,1 inch pin centers. Thedual
drain serves as a thermal link to the mounting surface for power dissipation
fevels up to 1 watt.
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1
10/28/04
IRFD9120PbF
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
Parameter
V(BR|DSS
Drain-to-Source Breakdown Voltage
Min.
-100
Typ.
Max.
Units
V
Test Conditions
VGS=0V, I
0
= - 2 5 0 U A
_
-0.10
AV(BR)DSS/ATj Breakdown Voltage Temp. Coefficient
RDS(WI]
VGS(IM
Static Drain-to-Source On-Resists nee
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
—
—
-2.0
0.71
—
—
0.60
-4.0
vrc
Q
V
Reference to 25°C, I D = - 1 mA
Vss=-10V, l
D
=-0.60A ©
; VDS=V
GSI
ID=-250UA
VDS=-50V, ID=-0.60A
VDS=-100V,VGS=OV
V D S = - 8 0 V , V G S = 0 V , Tj=150°C
©
Qh
IDSS
IGSS
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
s
Qss
Qgd
td(on)
V
tiKofl)
t|
LD
Ls
Clss
Coas
Crse
—
—
_
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
„
—
-100
-500
-100
100
18
3.0
9.0
S
uA
nA
V
Q S
=-20V
VGS=20V
b=-6.8A
nC
VDS=-80V
—
9.6
29
21
25
4.0
6.0
390
170
45
V
G
s=-10VSeeFig.6and 13©
VDD=-50V
—
„
—
—
—
ns
ln=-6.BA
R
G
=18n
RD=7.1Q
See Figure 1 0 ®
D
nH
—
—
—
—
PF
Between lead,
6 mm (0,25in.)
from package
and center of
die contact
V
G
s=OV
Vos=-25V
/
J
"^
3
/ = 1 . 0 M H z See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Is
ISM
VSD
trr
Qrr
ton
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) (D
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min,
Typ.
Max. I Units
-1.0
A
-8.0
-6.3
200
0.66
V
ns
iiC
Test Conditions
/
G
—
—
—
—
—
—
98
j 0.33
integral reverse
p-n junction diode.
\
Tj=25°C, l
s
=-1.0A,Vas=0V
®
Tj=25°C, IP=-6.8A
di/dt=100A/us ©
Intrinsic turn-on time is negleglble (turn-on is dominated by Ls-t-Lo)
Notes:
CD Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
© V D D = - 2 5 V , starting Tji25°C, L=52mH
R G = 2 5 Q , IAB=-2.0A (See Figure 12)
® ISD^-S.SA, di/dt5l10A/fis, VDD^V(BR)DSS,
Tj<175°C
<D Pulse width < 300 us; duty cycle <2%.
2
www.irf.com
CRT
—
—
MOSFET symbol
showing the
D
)
S
IRFD9120PbF
TOP
V9S
-J5V
TOP
-s.ov
-7.0V
-S.OV
-5.DV
-S.OV
-4,8V
V6S
-16V
-10V
-7,0V
"I
< ^ -
-s.ov
BOTTOM
-5.5V
-5,0V
-4..5V
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20us PULSE WIDTH
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x/
~
10°
-VDS- Drain-to-Source Voltage (volts)
Fig 1. Typical Output Characteristics,
Tr>25°C
-V
DS
, Drain-to-Source Voltage (volts)
Fig 2. Typical Output Characteristics,
Tc=175°C
Z5
a
l
<0
c
«
"«
8
3.0
*0
2.5
= -
5.BA
I
c
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2.0
175
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h -
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.1.0
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Z
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VDS
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WI ]TH
o
to
Q
CC
0.5
%S
10V
o.O
-60-40-20 0 20 40 BO 80 100 120 140 160 1B0
-VQS, Gate-to-Source Voltage (volts)
Fig 3. Typical Transfer Characteristics
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Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFD9120PbF
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4
3
FOR TEST CIRCUIT
SEE FIGURE 13
12
16
20
-VDS. Drain-lo-Source Voltage (volts)
Fig
5. Typical Capacitance Vs,
Drain-to-Source Voltage
QG, Total Gate Charge (nC)
Fig
6. Typical Gate Charge Vs,
Gate-to-Source Voltage
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-VSD, Source-to-Drain Voltage (volts)
Fig
7. Typical Source-Drain Diode
Forward Voltage
-Vpg, Drain-to-Source Voltage (volts)
Fig
8. Maximum Safe Operating Area
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4
IRFD9120PbF
1.0
^ V D O
,-,
E
<
5
h
m
a.
0.B
Fig 10a.
Switching Time Test Circuit
0.4
o
C
"fi
\
0.2
a
\
\
0.0
2S
50
75
100
125
150
175
To. Case Temperature ( C)
Fig
9. Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
S
10-
||
10'
c-i.sL.
0)
to
1
J
i
c
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a
CO
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o
1
^-'
llllll
Ill
fl^t
sziill
P0NSE)
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TW
cu
Z
o.i
10"
10"
1
II
1
1
10"
10"
a.
0.1
PEAK
J£L
» *
ttlJC
10
2
10
3
10
t i , Rectangular Pulse Duration (seconds)
Fig
11.
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Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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