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IRFC264NB

产品描述Power Field-Effect Transistor, 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
产品类别分立半导体    晶体管   
文件大小105KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 全文预览

IRFC264NB概述

Power Field-Effect Transistor, 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

IRFC264NB规格参数

参数名称属性值
零件包装代码DIE
包装说明UNCASED CHIP, R-XUUC-N2
针数3
Reach Compliance Codeunknown
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压250 V
最大漏源导通电阻0.06 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-XUUC-N2
元件数量1
端子数量2
工作模式ENHANCEMENT MODE
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式UNCASED CHIP
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式NO LEAD
端子位置UPPER
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
PD - 95820
IRFC264NB
HEXFET
®
Power MOSFET Die in Wafer Form
l
l
D
100% Tested at Probe

Available in Tape and Reel (upon request),
Chip Pack, and Sawn on Film
‚
G
S
250V
R
DS(on)
= 60mΩ
(max.)
6" Wafer
Electrical Characteristics
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
‚
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
Min
Typ.
Max
250V
–––
–––
–––
–––
60mΩ
2.0V
–––
4.0V
–––
–––
25µA
–––
–––
± 100nA
-55°C to 175°C Max.
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 25A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 250V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±20V
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Reference Packaged Part
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )
Al-1%Si (0.004mm)
0.181" x 0.303"
150 mm, with 100 flat
254 µm
01-5529
107 µm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
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Note:

The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which
are available upon request.
‚
Part number shown is for die in waveform. Contact factory for these other options.
Document Number: 90427
12/12/03
www.vishay.com
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