SM564043U7UNWBU
May 3, 2001
Revision History
• May 3, 2001
Added note 6 on page 2.
• May 9, 2000
Added Command Truth Table, Mode Register Table and notes.
Modified waveforms ( Auto Refresh (CBR) cycle and Power Down Mode and Clock Mask).
• August 31, 1998
Modified physical dimensions on page 7.
• June 29, 1998
Datasheet released.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
Unit 5, Herriard Business Park, Herriard, Basingstoke, Hampshire, RG25 2PN, UK • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
1
SM564043U7UNWBU
May 3, 2001
32MByte (4M x 64) Synchronous DRAM Module - 4Mx16 based
144-pin SODIMM, Unbuffered
Features
•
•
•
•
•
•
•
Standard
Configuration
Cycle Time
CAS# Latency
Burst Length
Burst Type
No. of Internal
Banks per SDRAM
• Operating Voltage
• Refresh
• Device Physicals
:
:
:
:
:
:
:
:
:
:
JEDEC
Non-parity
10/12/15ns
2&3
1, 2, 4, 8 or Page
Linear/Interleave
2/4
3.3V
4K/8K Standard/Low-Power
400mil TSOP
•
•
•
•
Lead Finish
:
Gold
Length x Height
:
67.60mm x 25.40mm
No. of sides
:
Double-sided
Mating Connector (Examples)
Horizontal
:
AMP-316310-1
Functional Diagram
DQMB3
DQMB2
DQMB1
DQMB0
RAS#
CAS#
WE#
CS0#
CKE0
CLK0
DQMB4
DQMB5
DQMB6
DQMB7
4Mx16
SDRAM
4Mx16
SDRAM
4Mx16
SDRAM
4Mx16
SDRAM
DQ0~DQ15
DQ16~DQ31
DQ32~DQ47
DQ48~DQ63
DQ0~DQ63
SCL
Notes
1.
2
3.
4.
5.
6.
:
A0~A11 and BA0 to all SDRAMs.
A12/BA1 to all SDRAMs (See page 2 for details).
A0~A2 of the serial PD EEPROM are grounded.
CLK signals are terminated with series resistors and/or
padding capacitors depending on load per clock.
Refer to note on page 3 for details on DQM control scheme.
Data is terminated using 10
Ω
series resistors.
SCL
SDA
SDA
SERIAL PD
EEPROM
V
CC
V
SS
Decoupling capacitors
to all devices.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
Unit 5, Herriard Business Park, Herriard, Basingstoke, Hampshire, RG25 2PN, UK • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
2
SM564043U7UNWBU
May 3, 2001
Pin Name
A0~A12
BA0, BA1
DQ0~DQ63
CLK0, CLK1
RAS#
CAS#
CKE0
Addresses
Bank Select Addresses
Data Inputs/Outputs
Clock Input
Row Address Strobe
Column Address Strobe
Clock Enable
DQMB0~DQMB7
CS0#
WE#
SDA
SCL
V
CC
V
SS
NC
DQ Mask Enables
Chip Select
Write Enable
Serial Data Input/Output
Serial Clock
Power Supply
Ground
No Connection
Note:
DQMs v/s Data I/Os
DQMB0
DQMB1
DQMB2
DQMB3
DQMB4
DQMB5
DQMB6
DQMB7
controls
controls
controls
controls
controls
controls
controls
controls
DQ0~DQ7
DQ8~DQ15
DQ16~DQ23
DQ24~DQ31
DQ32~DQ39
DQ40~DQ47
DQ48~DQ55
DQ56~DQ63
Pin
No.
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
V
SS
DQMB0
DQMB1
V
CC
A0
A1
A2
V
SS
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
DQ13
DQ14
DQ15
V
SS
NC
NC
CLK0
V
CC
RAS#
WE#
CS0#
NC
Pin
No.
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
Pin
Designation
V
SS
DQ32
DQ33
DQ34
DQ35
V
CC
DQ36
DQ37
DQ38
DQ39
V
SS
DQMB4
DQMB5
V
CC
A3
A4
A5
V
SS
DQ40
DQ41
DQ42
DQ43
V
CC
DQ44
DQ45
DQ46
DQ47
V
SS
NC
NC
CKE0
V
CC
CAS#
NC
A12 (Note 2)
NC
Pin
No.
73
75
77
79
81
83
85
87
89
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
135
137
139
141
143
Pin
Designation
NC
V
SS
NC
NC
V
CC
DQ16
DQ17
DQ18
DQ19
V
SS
DQ20
DQ21
DQ22
DQ23
V
CC
A6
A8
V
SS
A9
A10/AP (Note 1)
V
CC
DQMB2
DQMB3
V
SS
DQ24
DQ25
DQ26
DQ27
V
CC
DQ28
DQ29
DQ30
DQ31
V
SS
SDA
V
CC
Pin
No.
74
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
136
138
140
142
144
Pin
Designation
CLK1
V
SS
NC
NC
V
CC
DQ48
DQ49
DQ50
DQ51
V
SS
DQ52
DQ53
DQ54
DQ55
V
CC
A7
BA0
V
SS
BA1 (Note 3)
A11
V
CC
DQMB6
DQMB7
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
DQ61
DQ62
DQ63
V
SS
SCL
V
CC
Addressing Scheme
2 Bank Devices
A0~A12 : Row Addresses
A0~A7 : Column Addresses
BA0
: Bank Select Address
4 Bank Devices
A0~A11 : Row Addresses
A0~A7 : Column Addresses
BA0, BA1 : Bank Select Addresses
Note :
1. A10/AP initiates Auto-precharge.
2. A12 is NC for 4 bank SDRAMs.
3. BA1 is NC for 2 bank SDRAMs.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
Unit 5, Herriard Business Park, Herriard, Basingstoke, Hampshire, RG25 2PN, UK • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
3
SM564043U7UNWBU
May 3, 2001
DC Characteristics
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 1.0 to +4.6
4
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3V
0.8
V
Unit
V
V
Capacitance
(V
CC
= 3.3V
±
0.3V, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (DQMB0~DQMB7)
Input Capacitance (CS#, WE#, CLK, CKE, RAS#, CAS#)
Input/Output Capacitance (DQ0~DQ63)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
30
15
30
17
Unit
pF
pF
pF
pF
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
Unit 5, Herriard Business Park, Herriard, Basingstoke, Hampshire, RG25 2PN, UK • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
4
SM564043U7UNWBU
May 3, 2001
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
0.3V, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
10ns
12ns
Min Max Min Max
-40
40
-40
40
-10
10
-10
10
15ns
Min Max
-40
40
-10
10
Unit
µ
A
µ
A
(V
CC
= 3.3V±0.3V, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
Burst Length = 1, t
CLK
= min.
t
RC
= min.. One Bank Active
CKE =V
IL
, t
CLK
= min.
All Banks Idle
CKE =V
IH
, t
CLK
= min.
All Banks Idle
CKE =V
IL
, t
CLK
= min.
Any Bank Active
CKE =V
IH
, t
CLK
= min.
Any Bank Active
t
CLK
= min.
t
CLK
= min., t
RC
= min.
Auto Refresh
CKE =V
IL
10ns
560
8
80
20
100
480
680
8
Max.
12ns
520
8
80
20
100
460
520
8
Unit
15ns
480
8
80
20
100
340
560
8
mA
mA
mA
mA
mA
mA
mA
mA
Note
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
Precharge Standby Current
I
CC2
Active Standby Current
I
CC3
Burst Mode Current
Refresh Current
Self Refresh Current
I
CC4
I
CC5
I
CC6
Notes:
1.
2.
3.
I
CC
depends on output load condition when the device is selected. I
CC
(max) is specified at the output open condition.
An initial pulse of 200µs is required after power-up followed by a minimum of eight Auto-Refresh-Cycles.
All currents are for 4 bank, 4K refresh standard power SDRAMs.
C
orporate Headquarters:
P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
Unit 5, Herriard Business Park, Herriard, Basingstoke, Hampshire, RG25 2PN, UK • Tel: +44-870-870-8747 • Fax: +44-870-870-8757
Asia/Pacific:
Plot 18, Lrg Jelawat 4, Kawasan Perindustrian Seberang Jaya 13700, Prai, Penang, Malaysia • Tel: +604-3992909 • Fax: +604-3992903
5
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