IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT169G
SCR
7 September 2015
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92)
plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic
ICs and other low power gate trigger circuits.
2. Features and benefits
•
•
•
High voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate
3. Applications
•
•
•
•
Ignition circuits
Lighting ballasts
Protection circuits
Switched Mode Power Supplies
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
average on-state
current
RMS on-state current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
T
j
junction temperature
-
-
125
°C
-
-
-
-
8
9
A
A
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
600
600
0.5
0.8
Unit
V
V
A
A
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TO
-92
NXP Semiconductors
BT169G
SCR
Symbol
I
GT
I
L
I
H
dV
D
/dt
Parameter
gate trigger current
latching current
holding current
Conditions
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
Fig. 8
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
V
DM
= 402 V; T
j
= 125 °C; R
GK
= 1 kΩ;
(V
DM
= 67% of V
DRM
); exponential
waveform;
Fig. 12
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit;
Fig. 12
Min
-
-
-
Typ
50
2
2
Max
200
6
5
Unit
µA
mA
mA
Static characteristics
Dynamic characteristics
rate of rise of off-state
voltage
500
800
-
V/µs
-
25
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
A
G
K
anode
gate
cathode
321
Simplified outline
Graphic symbol
A
G
sym037
K
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT169G
BT169G/DG
TO-92
TO-92
Description
plastic single-ended leaded (through hole) package; 3
leads
plastic single-ended leaded (through hole) package; 3
leads
Version
SOT54
SOT54
Type number
BT169G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 September 2015
2 / 13
NXP Semiconductors
BT169G
SCR
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
lead
≤ 83 °C;
Fig. 1
half sine wave; T
lead
≤ 83 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
0.8
P
tot
(W)
0.6
2.8
0.4
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.1
0.2
0.3
0.4
form
factor
a
4
2.8
2.2
1.9
1.57
0.5
α
101
2.2
a = 1.57
1.9
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
600
0.5
0.8
8
9
0.32
50
1
5
2
0.1
150
125
001aab446
Unit
V
V
A
A
A
A
A²s
A/µs
A
V
W
W
°C
°C
77
T
lead(max)
(°C)
89
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/
µs
over any 20 ms period
-
-40
-
0.2
113
0
I
T(AV)
(A)
125
0.6
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
BT169G
Total power dissipation as a function of average on-state current; maximum values
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 September 2015
3 / 13
NXP Semiconductors
BT169G
SCR
2
I
T(RMS)
(A)
1.5
001aab449
1
I
T(RMS)
(A)
0.8
83 °C
001aab450
0.6
1
0.4
0.5
0.2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
150
T
lead
(°C)
f = 50 Hz; T
lead
= 83 °C
Fig. 2.
RMS on-state current as a function of surge
duration for sinusoidal currents
10
I
TSM
(A)
8
Fig. 3.
RMS on-state current as a function of lead
temperature; maximum values
001aab499
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT169G
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 September 2015
4 / 13
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