FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
FEATURES
•
•
•
•
•
High Output Power: P1dB = 31dBm (Typ.)
High Gain: G1dB = 20dB (Typ.)
High PAE:
η
add = 25% (Typ.)
Impedance Matched Zin/Zout = 50Ω
0.25µm PHEMT Technology
DESCRIPTION
The FMM5815GJ-1 is a packaged, high-gain, high linearity, amplifier
designed for operation in the17.7-19.7GHz frequency range.
This amplifier has an input and output designed for use in 50Ω
systems. This device is well suited for point-to-point communication
applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Operating Case Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Condition
Rating
10
-7.0
22
-55 to +125
-40 to +85
Unit
V
V
dBm
°C
°C
Eudyna
recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Drain Current at 1 dB G.C.P.
Gate Current at 1 dB G.C.P.
Power-Added Efficiency at 1 dB G.C.P.
Input Return Loss
Output Return Loss
3rd Order Intermodulation
Distortion
Symbol
f
P
1dB
G
1dB
Iddrf
Iggrf
η
add
RLin
RLout
IM3
∆f
= 10MHz, 2-Tone Test,
Pout = 20dBm S.C.L.
VDD = 6V
VGG = -5V
f = 17.7 ~ 19.7GHz
IDD
=
600mA (Typ.)
ZS = ZL = 50Ω
Conditions
Limits
Min. Typ. Max.
17.7
29
18
-
-
-
-
-
-30
-
31
20
800
-12
25
-10
-6
-35
19.7
-
23
950
-15
-
-
-
-
Unit
GHz
dBm
dB
mA
mA
%
dB
dB
dBc
CASE STYLE:
GJ
Edition 1.2
September 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
OUTPUT POWER vs. FREQUENCY
VDD = 6V
VGG = -5V
P1dB, G1dB vs. VDD
VDD = 6V, VGG = -5V
34
32
Output power (dBm)
30
28
26
24
22
20
18
16
17.7GHz P1dB
18.7GHz P1dB
19.7GHz P1dB
P1dB
17.7GHz G1dB
18.7GHz G1dB
19.7GHz G1dB
34
P1dB (dBm), G1dB (dB)
32
30
28
26
24
22
20
G1dB
P1dB
8dBm
6dBm
4dBm
2dBm
0dBm
-2dBm
18
17.5
18.0
18.5
19.0
19.5
20.0
4
5
VDD (V)
6
Frequency (GHz)
OUTPUT POWER &
η
add vs. INPUT POWER
34
VDD = 6V
32
VGG = -5V
17.7GHz Pout
18.7GHz Pout
30
19.7GHz Pout
17.7GHz
η
add
28
18.7GHz
η
add
19.7GHz
η
add
IM3, IM5 vs. OUTPUT POWER
-20
V
DD = 6V
VGG = -5V
∆f
= 10MHz
-30
17.7GHz IM3
18.7GHz IM3
19.7GHz IM3
17.7GHz IM5
-40
18.7GHz IM5
19.7GHz IM5
Pout
IM3 (dBc), IM5 (dBc)
35
30
η
add
Output Power (dBm)
IM3
IM5
24
22
20
18
16
-2
0
2
4
6
8
η
add (%)
26
25
20
15
10
5
-50
-60
10 12
14
0
15
17
19
21
23
25
27
Total Output Power (dBm)
Input Power (dBm)
2
FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
S-PARAMETERS
VDD = 6V, VGG = -5V
FREQUENCY
(MHZ)
17200
17500
17700
17900
18000
18200
18400
18600
18800
19000
19200
19400
19500
19700
20000
20200
S11
MAG
.081
.180
.245
.302
.325
.362
.385
.399
.401
.398
.389
.389
.393
.426
.472
.475
S21
ANG
MAG
11.021
11.546
11.715
11.777
11.800
11.806
11.909
12.029
12.277
12.279
11.980
11.273
10.899
10.202
9.167
8.445
S12
ANG
MAG
.003
.004
.004
.004
.004
.004
.004
.004
.005
.005
.005
.005
.005
.004
.002
.001
S22
ANG
MAG
.287
.319
.340
.362
.369
.392
.408
.418
.415
.398
.366
.331
.315
.293
.315
.315
ANG
-63.7
-105.9
-135.6
-165.2
-179.8
152.9
127.2
103.2
80.2
59.4
41.2
26.5
21.7
14.7
0.5
-13.6
19.3
-51.5
-81.8
-109.7
-123.5
-150.8
-179.4
150.9
117.4
80.6
39.8
-2.2
-23.0
-62.2
-117.1
-150.8
-38.3
-94.5
-132.5
-170.0
171.3
134.1
97.1
59.7
21.3
-18.5
-59.5
-99.4
-119.4
-157.6
145.1
107.3
-44.6
-83.3
-105.2
-135.1
-143.3
-176.7
160.5
133.8
108.7
81.8
53.1
22.3
-1.8
-40.2
-94.2
-143.2
RECOMMENDED BIAS CIRCUIT
1000pF
50Ω
VGG
VDD
50Ω
1000pF
3
2
RFin
1
1000pF
50Ω
4
5
RFout
6
50Ω
1000pF
VGG
VDD
Note 1: The R/C networks are recommended on the bias supply lines, close to the
package, to prevent video oscillations which could damage the module.
Note 2: Bias point VDD can be connected at the input side or at the output:
The two pins named VDD are internally connected. The same is true for VGG.
3
FMM5815GJ-1
17.7-19.7GHz Power Amplifier MMIC
Case Style "GJ"
Metal-Ceramic Hermetic Package
6-0.3
(0.012)
4-R 1.2±0.15
(0.047)
3.5 Max.
(0.137)
1.3±0.15
(0.051)
3
11±0.15
(0.433)
15
(0.591)
7
(0.276)
3.8
(0.149)
4
5
6
7
(0.276)
6-0.08
0.9
(0.035)
1.
2.
3.
4.
5.
6.
7.
VDD
RFin
VGG
VGG
RFout
VDD
GND (Body)
Unit: mm(inches)
2
1
7
INDEX
1Min.
(0.039)
6±0.15
(0.236)
12±0.15
(0.472)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
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