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1N3032BUR-1TRE3

产品描述Zener Diode, 33V V(Z), 5%, 1.5W,
产品类别分立半导体    二极管   
文件大小161KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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1N3032BUR-1TRE3概述

Zener Diode, 33V V(Z), 5%, 1.5W,

1N3032BUR-1TRE3规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codecompli
ECCN代码EAR99
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗45 Ω
元件数量1
最高工作温度175 °C
最大功率耗散1.5 W
标称参考电压33 V
表面贴装YES
最大电压容差5%
工作测试电流7.5 mA
Base Number Matches1

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1N3016BUR-1 thru 1N3051BUR-1, e3
(or MLL3016B thru MLL3051B, e3)
SCOTTSDALE DIVISION
Surface Mount 1.5 W
GLASS ZENER DIODES
DESCRIPTION
This surface mountable zener diode series is similar to the 1N3016 thru
1N3051 JEDEC registration in the DO-13 package except that it meets the
surface mount DO-213AB outline. It is an ideal selection for applications of
high density and low parasitic requirements. Due to its glass hermetic seal
qualities and metallurgically enhanced internal construction, it is also well
suited for high-reliability applications. This can be acquired by a source
control drawing (SCD), or by ordering device types with MQ, MX, or MV
prefix to part number for equivalent screening to JAN, JANTX or JANTXV.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AB
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Leadless surface mount package equivalents to the
JEDEC registered 1N3016 thru 1N3051 except with
higher power rating of 1.5 Watts
Ideal for high-density mounting
Voltage range: 6.8 to 200 volts
Hermetically sealed, double-slug glass construction
Metallurgically enhanced contact construction.
Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, JANTXV, and JANS with
MQ, MX, MV, or MSP prefixes respectively for part
numbers, e.g. MX1N3016BUR-1, MV1N3051BUR-1,
etc.
Axial lead “thru-hole” DO-13 packages per JEDEC
registration available as 1N3016B thru 1N3051B (see
separate data sheet with MIL-PRF-19500/115
qualification)
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Wide selection from 6.8 to 200 V
Tight voltage tolerances available
Low reverse (leakage) currents
Leadless package for surface mounting
Ideal for high-density mounting
Metallurgically enhanced internal contact design for
greater reliability and lower thermal resistance
Nonsensitive to ESD
Hermetically sealed glass package
Specified capacitance (see Figure 2)
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Power dissipation at 25
º
C: 1.5 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
º
C to
+175
º
C
Thermal Resistance: 40
º
C/W junction to end cap,
º
or 120 C/W junction to ambient when mounted on
FR4 PC board (1 oz Cu) with recommended
footprint (see last page)
Steady-State Power: 1.50 watts at end-cap
temperature T
EC
< 115
o
C, or 1.25 watts at T
A
= 25
º
C
when mounted on FR4 PC board and
recommended footprint as described for thermal
resistance (also see Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
º
Solder Temperatures: 260 C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass MELF package
TERMINALS: Tin-lead or RoHS compliant
annealed matte-Tin plating solderable per MIL-
STD-750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-1-A
with 12 mm tape, 1500 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
1N3016BUR-1, e3 thru
1N3051BUR-1, e3
Copyright
©
2006
3-12-2006 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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