Product Datasheet
February 5, 2001
18-27 GHz 1W Power Amplifier
Key Features
•
•
•
•
•
•
•
TGA1135B-SCC
0.25 um pHEMT Technology
14 dB Nominal Gain at 23GHz
29 dBm Nominal P1dB
37dBm OTOI typical
Typical 15dB Input/Output RL
Bias 6 - 7V @ 480 mA
On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications
•
•
•
Point-to-Point Radio
Point-to-Multipoint Communications
Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
Product Description
The TriQuint TGA1135B-SCC is a balanced two-
stage HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The
TGA11135B is designed to support a variety of
millimeter wave applications including point-to-
point digital radio and LMDS/LMCS.
The balanced configuration two stage design
consists of a pair of 600um input devices driving a
4 x 600um output stage. Power combining is
achieved with on-chip Lange couplers.
The TGA1135B-SCC provides 29 dBm nominal
output power at 1dB compression across
18 - 27GHz. Typical small signal gain is 14 dB
across the band. Input and output return loss is
typically -15dB.
An on-chip power detector and reference diode
may be used for power monitoring/control and
bias control loops.
P1dB (dBm)
S21 (dB)
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Frequency (GHz)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
30.5
30
29.5
29
28.5
28
27.5
27
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
VD = 7V
The TGA1135B-SCC requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
VD = 6V
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Product Datasheet
February 5, 2001
TGA1135B-SCC
TABLE I
MAXIMUM RATINGS
SYMBOL
V
+
I
+
I
-
P
IN
P
D
T
CH
T
M
T
STG
PARAMETER 4/
POSITIVE SUPPLY VOLTAGE
POSITIVE SUPPLY CURRENT
NEGATIVE SUPPLY CURRENT
INPUT CONTINUOUS WAVE POWER
POWER DISSIPATION
OPERATING CHANNEL TEMPERATURE
MOUNTING TEMPERATURE
(30 SECONDS)
STORAGE TEMPERATURE
VALUE
13 V
720 mA
28.2 mA
23 dBm
9.4 W
150
0
C
320
0
C
-65 to 150
0
C
2/ 3/
1/
NOTES
1/
2/
3/
4/
Total current for all stages.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (T
M
). For maximum life, it
is recommended that junction temperatures be maintained at the lowest possible levels.
These ratings represent the maximum operable values for the device
.
TABLE II
DC SPECIFICATIONS (100%)
(T
A
= 25
°C
+ 5
°C)
NOTES
SYMBOL
I
DSS1
G
M1
1/
1/
1/
1/
1/
1/
2/
|V
P1
|
|V
P2
|
|V
P3-6
|
|V
BVGD1
|
|V
BVGS1
|
V
P
, V
BVGD
, and V
BVGS
are negative.
The measurement conditions are subject to change at the manufacture’s discretion (with appropriate
notification to the buyer).
TEST CONDITIONS 2/
MIN
STD
STD
STD
STD
STD
STD
STD
60
132
0.5
0.5
0.5
13
13
LIMITS
MAX
282
318
1.5
1.5
1.5
30
30
mA
mS
V
V
V
V
V
UNITS
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Product Datasheet
February 5, 2001
TGA1135B-SCC
TABLE IV
RF SPECIFICATIONS
(T
A
= 25°C + 5°C)
NOTE
TEST
MEASUREMENT
CONDITIONS
7V @ 460mA
18 – 27 GHz
18 – 27 GHz
VALUE
MIN
12
27
TYP
14
29
MAX
dB
dBm
UNITS
SMALL-SIGNAL
GAIN MAGNITUDE
POWER OUTPUT
AT 1 dB GAIN
COMPRESSION
INPUT RETURN LOSS
MAGNITUDE
OUTPUT RETURN LOSS
MAGNITUDE
1/
OUTPUT THIRD ORDER
INTERCEPT
18 – 27 GHz
10
15
dB
18 – 27 GHz
10
15
dB
34.5
37
dBm
1/
Output Third Order Intercept point minimum performance is measured at 18.0, 23.0, 26.0 GHz, fixed voltage,
Vd = 7.0V, Vg = Vg1 value passed from S-parameter testing. Power in per tone = -2.0 dBm. Separation =
0.010 GHz.
TABLE V
RELIABILITY DATA
PARAMETER
R
θJC
Thermal resistance
(channel to backside
of carrier plate)
BIAS CONDITIONS
V
D
(V)
I
D
(mA)
6
540
P
DISS
(W)
3.24
R
θJC
(C/W)
23.09
T
CH
(°C)
144.8
T
M
(HRS)
2.1E7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at
70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC power
is dissipated.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
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