NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
1Mb SYNCBURST
™
SRAM
FEATURES
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
DD
)
• Separate +3.3V +0.3V/-0.165V isolated output
buffer supply (V
DD
Q)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion
and address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down for portable applications
• 100-lead TQFP package for high density, high
speed SRAMs
• Low capacitive bus loading
• x18, x32, and x36 options available
MT58L64L18D, MT58L32L32D,
MT58L32L36D
3.3V V
DD
, 3.3V I/O, Pipelined, Double-
Cycle Deselect
100-Pin TQFP*
*JEDEC-standard MS-026 BHA (LQFP).
gered single clock input (CLK). The synchronous in-
puts include all addresses, all data inputs, active LOW
chip enable (CE#), two additional chip enables for easy
depth expansion (CE2, CE2#), burst control inputs
(ADSC#, ADSP#, ADV#), byte write enables (BWx#) and
global write (GW#).
Asynchronous inputs include the output enable
(OE#), clock (CLK) and snooze enable (ZZ). There is
also a burst mode pin (MODE) that selects between
interleaved and linear burst modes. The data-out (Q),
enabled by OE#, is also asynchronous. WRITE cycles
can be from one to two bytes wide (x18) or from one to
four bytes wide (x32/x36), as controlled by the write
control inputs.
Burst operation can be initiated with either address
status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can
be internally generated as controlled by the burst ad-
vance pin (ADV#).
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written. During WRITE cycles on the x18 device,
BWa# controls DQa pins and DQPa; BWb# controls DQb
pins and DQPb. During WRITE cycles on the x32 and
x36 devices, BWa# controls DQa pins and DQPa; BWb#
controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. GW#
LOW causes all bytes to be written. Parity pins are only
OPTIONS
• Timing (Access/Cycle/MHz)
3.5ns/6.0ns/166 MHz
4.2ns/7.5ns/133 MHz
5ns/10ns/100 MHz
• Configurations
64K x 18
32K x 32
32K x 36
• Package
100-pin TQFP
• Operating Temperature Range
Commercial (0ºC to +70ºC)
Part Number Example:
MARKING
-6
-7.5
-10
MT58L64L18D
MT58L32L32D
MT58L32L36D
T
None
MT58L64L18DT-10
GENERAL DESCRIPTION
The Micron
®
SyncBurst
™
SRAM family employs
high- speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
The MT58L64L18D and MT58L32L32/36D 1Mb
SRAMs integrate a 64K x 18, 32K x 32, or 32K x 36 SRAM
core with advanced synchronous peripheral circuitry
and a 2-bit burst counter. All synchronous inputs pass
through registers controlled by a positive-edge-trig-
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D_B.p65 – Rev. B, Pub. 11/02
1
©2002, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
FUNCTIONAL BLOCK DIAGRAM
64K x 18
16
SA0, SA1, SA
MODE
ADV#
CLK
ADDRESS
REGISTER
16
14
16
2
SA0-SA1
SA1'
BINARY Q1
COUNTER AND
LOGIC
CLR
Q0
SA0'
ADSC#
ADSP#
BYTE “b”
WRITE REGISTER
9
BYTE “b”
WRITE DRIVER
9
64K x 9 x 2
MEMORY
ARRAY
9
18
SENSE 18
AMPS
BWb#
OUTPUT
18
REGISTERS
OUTPUT
BUFFERS
E
18
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
9
BYTE “a”
WRITE DRIVER
DQs
DQPa
DQPb
ENABLE
REGISTER
18
PIPELINED
ENABLE
2
INPUT
REGISTERS
FUNCTIONAL BLOCK DIAGRAM
32K x 32/36
15
SA0, SA1, SA
ADDRESS
REGISTER
15
13
SA0-SA1
15
MODE
ADV#
CLK
Q1
BINARY
COUNTER
SA0'
CLR
Q0
SA1'
ADSC#
ADSP#
BWd#
BYTE “d”
WRITE REGISTER
BYTE “c”
WRITE REGISTER
BYTE
“d”
WRITE DRIVER
BYTE
“c”
WRITE DRIVER
BYTE
“b”
WRITE DRIVER
BYTE
“a”
WRITE DRIVER
INPUT
REGISTERS
32K x 8 x 4
(x32)
32K x 9 x 4
(x36)
MEMORY
ARRAY
SENSE
AMPS
BWc#
OUTPUT
REGISTERS
BWb#
BYTE “b”
WRITE REGISTER
OUTPUT
BUFFERS
E
DQs
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
ENABLE
REGISTER
PIPELINED
ENABLE
4
NOTE:
Functional Block Diagrams illustrate simplified device operation. See Truth Table, Pin Descriptions and timing diagrams for
detailed information.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D_B.p65 – Rev. B, Pub. 11/02
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
GENERAL DESCRIPTION (continued)
available on the x18 and x36 versions.
The device incorporates an additional pipelined
enable register which delays turning off the output
buffer an additional cycle when a deselect is executed.
This feature allows depth expansion without penaliz-
ing system performance.
Micron’s 1Mb SyncBurst SRAMs operate from a +3.3V
power supply, and all inputs and outputs are TTL-com-
patible. The device is ideally suited for Pentium
®
and
PowerPC pipelined systems and systems that benefit
from a very wide, high-speed data bus. The device is
also ideal in generic 16-, 18-, 32-, 36-, 64- and 72-bit-
wide applications.
Please refer to the Micron Web site
(www.micron.com/sramds) for the latest data sheet.
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x32/x36
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
NC
DQc
NC
DQc
DQb
DQc
DQb
DQc
V
SS
V
DD
Q
DQb
DQc
DQb
DQc
V
DD
V
DD
NC
V
SS
DQb
DQd
DQb
DQd
V
DD
Q
V
SS
DQb
DQd
DQb
DQd
DQPb
DQd
NC
DQd
x18
NC
NC
NC
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32/x36
V
SS
V
DD
Q
NC
DQd
NC
DQd
NC
NC/DQPd**
MODE
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
NC/SA*
NC/SA*
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x32/x36
NC/DQPa**
DQa
DQa
V
DD
Q
V
SS
NC
DQa
NC
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
NC
V
SS
DQa
DQb
DQa
DQb
V
DD
Q
V
SS
DQa
DQb
DQa
DQb
DQPa
DQb
NC
DQb
x18
NC
NC
NC
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32/x36
V
SS
V
DD
Q
DQb
DQb
NC/DQPb**
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
NC
NC
SA
NC
NC
* Pins 49 and 50 are reserved for address expansion.
** No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D_B.p65 – Rev. B, Pub. 11/02
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
PIN ASSIGNMENT (TOP VIEW)
100-PIN TQFP
(D-1)
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
NC/SA*
NC/SA*
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NC/DQPb**
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NC/DQPa**
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
DD
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
NC/SA*
NC/SA*
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
* Pins 49 and 50 are reserved for address expansion.
** No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D_B.p65 – Rev. B, Pub. 11/02
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
DD
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NC/DQPd**
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
NOT RECOMENDED FOR NEW DESIGNS
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
TQFP PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
SA0
SA1
SA
TYPE
Input
DESCRIPTION
Synchronous Address Inputs: These inputs are registered and must
meet the setup and hold times around the rising edge of CLK.
37
37
36
36
32-35, 44-48, 32-35, 44-48,
80-82, 99,
81, 82, 99,
100
100
93
94
–
–
93
94
95
96
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
individual bytes to be written and must meet the setup and hold
times around the rising edge of CLK. A byte write enable is LOW
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa pins and DQPa; BWb# controls DQb pins and
DQPb. For the x32 and x36 versions, BWa# controls DQa pins and
DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. Parity is only
available on the x18 and x36 versions.
Byte Write Enable: This active LOW input permits BYTE WRITE
operations and must meet the setup and hold times around the
rising edge of CLK.
Global Write: This active LOW input allows a full 18-, 32- or 36-bit
WRITE to occur independent of the BWE# and BWx# lines and must
meet the setup and hold times around the rising edge of CLK.
Clock: This signal registers the address, data, chip enable, byte
write enables and burst control inputs on its rising edge. All
synchronous inputs must meet setup and hold times around the
clock’s rising edge.
Synchronous Chip Enable: This active LOW input is used to enable
the device and conditions the internal use of ADSP#. CE# is sampled
only when a new external address is loaded.
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
Output Enable: This active LOW, asynchronous input enables the
data I/O output drivers.
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after
the external address is loaded. A HIGH on this pin effectively causes
wait states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
87
87
BWE#
Input
88
88
GW#
Input
89
89
CLK
Input
98
98
CE#
Input
92
92
CE2#
Input
64
64
ZZ
Input
97
97
CE2
Input
86
83
86
83
OE#
ADV#
Input
Input
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D_B.p65 – Rev. B, Pub. 11/02
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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