Datasheet> 器件分类 > 分立半导体> 晶体管> ASI10784

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ASI10784: 产品描述RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,; 产品类别分立半导体晶体管; 文件大小14KB，共1页; 制造商Advanced Semiconductor, Inc.

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ASI10784概述

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

ASI10784规格参数

参数名称	属性值
厂商名称	Advanced Semiconductor, Inc.
包装说明	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
基于收集器的最大容量	10 pF
集电极-发射极最大电压	24 V
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	O-CRPM-F4
端子数量	4
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND
封装形式	POST/STUD MOUNT
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	FLAT
端子位置	RADIAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

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BLX96

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

BLX96

is Designed for Class A

Television Band IV- V Amplifier

Applications Requiring High Linearity.

PACKAGE STYLE .280 4L STUD

45°

FEATURES:

•

= 7.0 dB Typical at 860 MHz

•

IMD

= -63 dBc Typ. at P

REF

= 0.5 W

•

Omnigold™

Metallization System

MAXIMUM RATINGS

DISS

STG

1.0 A

45 V

16 W @ T

= 25 C

-65 C to +200 C

-65 C to +150 C

11 C/W

DIM

.175 / 4.45

.275 / 6.99

.245 / 6.22

MINIMUM

inches / mm

#8-32 UNC

MAXIMUM

inches / mm

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

.572 / 14.53

.130 / 3.30

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

.255 / 6.48

.640 / 16.26

.217 / 5.51

.285 / 7.24

ORDER CODE: ASI10784

CHARACTERISTICS

SYMBOL

CEO

CER

CBO

EBO

IMD

= 40 mA

= 2 mA

= 0.5 mA

= 20 V

= 25 C

TEST CONDITIONS

= 10

Ω

MINIMUM TYPICAL MAXIMUM

3.5

UNITS

= 250 mA

f = 1.0 MHz

150

---

= 25 V

= 250 mA

REF

= 0.5 W

F = 860 MHz

Vision = -8.0 dB Sound = -7.0 dB Chroma = -16 dB

6.0

7.0

-60

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

ASI10784相似产品对比

	ASI10784	BLX96
描述	RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,	RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
厂商名称	Advanced Semiconductor, Inc.	Advanced Semiconductor, Inc.
包装说明	POST/STUD MOUNT, O-CRPM-F4	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
最大集电极电流 (IC)	1 A	1 A
基于收集器的最大容量	10 pF	10 pF
集电极-发射极最大电压	24 V	24 V
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	O-CRPM-F4	O-CRPM-F4
端子数量	4	4
最高工作温度	200 °C	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	ROUND	ROUND
封装形式	POST/STUD MOUNT	POST/STUD MOUNT
极性/信道类型	NPN	NPN
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	FLAT	FLAT
端子位置	RADIAL	RADIAL
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1

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