VISHAY
BYM36
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
•
Glass passivated
Hermetically sealed package
Very low switching losses
Low reverse current
High reverse voltage
Applications
Switched mode power supplies
High-frequency inverter circuits
949588
Mechanical Data
Case:
Sintered glass case, SOD 64
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
860 mg, (max. 1000 mg)
Parts Table
Part
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
Type differentiation
V
R
= 200 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
V
R
= 600 V; I
FAV
= 3 A
V
R
= 800 V; I
FAV
= 2.9 A
V
R
= 1000 V; I
FAV
= 2.9 A
SOD64
SOD64
SOD64
SOD64
SOD64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
t
p
= 10 ms, half sinewave
Sub type
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
Value
200
400
600
800
1000
65
Unit
V
V
V
V
V
A
Document Number 86012
Rev. 5, 07-Jan-03
www.vishay.com
1
BYM36
Vishay Semiconductors
Parameter
Average forward current
Test condition
Sub type
BYM36A-
BYM36C
BYM36D-
BYM36E
Non repetitive reverse avalanche energy
Junction and storage temperature range
I
(BR)R
= 1 A, inductive load
Symbol
I
FAV
I
FAV
E
R
VISHAY
Value
3
2.9
20
Unit
A
A
mJ
°C
T
j
= T
stg
- 55 to +
175
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC Board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
I
F
= 3 A
I
F
= 3 A
I
F
= 3 A, T
j
= 175 °C
I
F
= 3 A, T
j
= 175 °C
Reverse current
Reverse breakdown voltage
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 150 °C
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
I
R
= 100
µA
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36A-
BYM36C
BYM36D-
BYM36E
Test condition
Sub type
BYM36A-
BYM36C
BYM36D-
BYM36E
BYM36A-
BYM36C
BYM36D-
BYM36E
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
t
rr
t
rr
300
500
700
900
1100
100
150
Min
Typ.
Max
1.6
1.78
1.22
1.28
5
100
Unit
V
V
V
V
µA
µA
V
V
V
V
V
ns
ns
www.vishay.com
2
Document Number 86012
Rev. 5, 07-Jan-03
VISHAY
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
P – Maximum Reverse Power Dissipation ( mW )
R
BYM36
Vishay Semiconductors
600
I
R
– Reverse Current (
m
A )
1000
R
thJA
=25K/W
1000V
800V
R
thJA
=70K/W
600V
500
400
300
200
100
0
0
100
10
V
R
=V
RRM
1
400V
200V
0.1
40
80
120
160
200
95 9704
0
40
80
120
160
200
95 9705
T
j
– Junction Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
4
I
FAV
– Average Forward Current ( A )
Figure 4. Max. Reverse Current vs. Junction Temperature
100
BYM36A, BYM36B, BYM36C
I
F
– Forward Current ( A )
T
j
=175°C
10
3
R
thJA
=25K/W
2
R
thJA
=70K/W
1
V
R
=V
RRM
,
Half Sinewave
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
1
T
j
=25°C
0.1
0.01
0.001
0
1
BYM36A, BYM36B, BYM36C
2
3
4
0
95 9706
95 9708
V
F
– Forward Voltage ( V )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Forward Current vs. Forward Voltage
4
I
FAV
– Average Forward Current ( A )
100
BYM36D, BYM36E
I
F
– Forward Current ( A )
T
j
=175°C
10
3
R
thJA
=25K/W
2
R
thJA
=70K/W
1
V
R
=V
RRM
,
Half Sinewave
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
1
T
j
=25°C
0.1
0.01
0.001
0
1
BYM36D, BYM36E
2
3
4
0
95 9707
95 9709
V
F
– Forward Voltage ( V )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 6. Max. Forward Current vs. Forward Voltage
Document Number 86012
Rev. 5, 07-Jan-03
www.vishay.com
3
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
BYM36
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86012
Rev. 5, 07-Jan-03
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
