Bulletin I27503 08/97
MT..KB SERIES
THREE PHASE CONTROLLED BRIDGE
Power Modules
Features
Package fully compatible with the industry standard INT-A-pak
power modules series
High thermal conductivity package, electrically insulated case
Outstanding number of power encapsulated components
Excellent power volume ratio
4000 V
RMS
isolating voltage
UL E78996 approved
55 A
90 A
110 A
Description
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose
and heavy duty applications.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
range
T
J
range
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units
51MT.KB 91MT.KB 111MT.KB
55
85
390
410
770
700
7700
90
85
950
1000
4525
4130
45250
800 to 1600
- 40 to 125
- 40 to 125
110
85
1130
1180
6380
5830
63800
A
°C
A
A
A
2
s
A
2
s
A
2
√s
V
°C
°C
www.irf.com
1
53-93-113MT..KB Series
Bulletin I27503 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRM
, maximum
repetitive peak
reverse voltage
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
V
RSM
, maximum
non-repetitive peak
reverse voltage
V
900
1100
1300
1500
1700
900
1100
1300
1500
1700
V
DRM
, max. repetitive
peak off-state voltage
gate open circuit
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
80
100
53/52/51MT..KB
120
140
160
80
93/92/91MT..KB
113/112/111MT..KB
100
120
140
160
10
20
Forward Conduction
Parameter
I
O
I
TSM
Maximum DC output current
@ Case temperature
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
It
2
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
55
85
390
410
330
345
770
700
540
500
90
85
950
1000
800
840
4525
4130
3200
2920
45250
1.09
1.27
4.10
3.59
1.65
150
200
mA
400
110
85
1130
1180
950
1000
6380
5830
4510
4120
63800
1.04
1.27
3.93
3.37
1.57
V
A/µs
mΩ
A
√s
2
A
°C
A
120° Rect conduction angle
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Initial
T
J
= T
J
max.
Maximum I t for fusing
2
As
2
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
√t
2
Maximum I
√t
for fusing
2
7700
1.17
1.45
12.40
11.04
2.68
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
(I >
π
x I
T(AV)
), @ T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
(I >
π
x I
T(AV)
), @ T
J
max.
I
pk
= 150A, T
J
= 25°C
t
p
= 400µs single junction
T
J
= 25
o
C, from 0.67 V
DRM
, I
TM
=
π
x I
T(AV)
,
I
g
= 500mA, t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
r
t2
V
TM
di/dt
I
H
I
L
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
Max. non-repetitive rate
of rise of turned on current
Max. holding current
Max. latching current
V
2
www.irf.com
53-93-113MT..KB Series
Bulletin I27503 08/97
Blocking
Parameter
V
INS
RMS isolation voltage
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
4000
500
V
V/µs
T
J
= 25
o
C all terminal shorted
f = 50Hz, t = 1s
T
J
= T
J
max., linear to 0.67 V
DRM
,
gate open circuit
dv/dt Max. critical rate of rise
of off-state voltage (*)
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.
Triggering
Parameter
P
GM
Max. peak gate power
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
10
2.5
2.5
10
A
V
W
T
J
= T
J
max.
P
G(AV)
Max. average gate power
I
GM
-V
GT
V
GT
Max. peak gate current
Max. peak negative
gate voltage
Max. required DC gate
voltage to trigger
I
GT
Max. required DC gate
current to trigger
V
GD
I
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
4.0
2.5
1.7
270
150
80
0.25
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
Anode supply = 6V, resistive load
mA
V
T
J
= 25°C
T
J
= 125°C
Anode supply = 6V, resistive load
@ T
J
= T
J
max., rated V
DRM
applied
6
mA
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating
temperature range
Max. storage temperature
range
Max. thermal resistance,
junction to case
0.18
1.07
0.19
1.17
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting
torque ± 10%
wt
to heatsink
to terminal
4 to 6
3 to 4
225
g
Nm
0.14
0.86
0.15
0.91
0.03
0.12
0.70
0.12
0.74
K/W
K/W
DC operation per module
DC operation per junction
120° Rect condunction angle per module
120° Rect condunction angle per junction
Per module
Mounting surface smooth, flat an greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricated threads.
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
-40 to 125
°C
-40 to 125
°C
Approximate weight
www.irf.com
3
53-93-113MT..KB Series
Bulletin I27503 08/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
53/52/51MT.KB
93/92/91MT.KB
113/112/111MT.KB
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.091
0.044
0.037
90
o
0.117
0.055
0.046
60
o
0.157
0.071
0.059
30
o
0.236
0.100
0.082
Units
K/W
0.072
0.033
0.027
0.085
0.039
0.033
0.108
0.051
0.042
0.152
0.069
0.057
0.233
0.099
0.081
0.055
0.027
0.023
Ordering Information Table
Device Code
11
1
3
2
MT
3
160
4
K
B
5
S90
6
1
-
Current rating code: 5 = 55 A (Avg)
9 = 90 A (Avg)
11 = 110 A (Avg)
2
-
Circuit configuration code: 3 = Full-controlled bridge
2 = Positive half-controlled bridge
1 = Negative half-controlled bridge
3
4
5
6
-
-
-
-
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Ratings Table)
Generation
II
Critical dv/dt: None = 500V/µs (Standard value)
S90
= 1000V/µs (Special selection)
full-controlled bridge
(53, 93, 113MT..KB)
positive half-controlled bridge
(52, 92, 112MT..KB)
negative half-controlled bridge
(51, 91, 111MT..KB)
NOTE: To order the Optional Hardware see Bulletin I27900
4
www.irf.com
53-93-113MT..KB Series
Bulletin I27503 08/97
Outline Table (with optional barriers)
All dimensions in millimeters (inches)
Outline Table (without optional barriers)
All dimensions in millimeters (inches)
www.irf.com
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
