PD - 95788B
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WSPbF
IRG4BC40WLPbF
C
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Lead-Free
V
CES
= 600V
G
E
V
CE(on) typ.
=
2.05V
@V
GE
= 15V, I
C
= 20A
n-channel
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
D
2
Pak
IRG4BC40WSPbF
TO-262
IRG4BC40WLPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted steady-state)
Weight
Typ.
0.5
2.0 (0.07)
Max.
0.77
40
Units
°C/W
g (oz)
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1
02/19/10
IRG4BC40WS/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
18
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage 0.44
V/°C V
GE
= 0V, I
C
= 1.0mA
2.05 2.5
I
C
= 20A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
2.36
I
C
= 40A
See Fig.2, 5
V
1.90
I
C
= 20A , T
J
= 150°C
Gate Threshold Voltage
3.0
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
13
mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
18
28
S
V
CE
=
100 V, I
C
=20A
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
2500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
98
12
36
27
22
100
74
0.11
0.23
0.34
25
23
170
124
0.85
7.5
1900
140
35
Max. Units
Conditions
147
I
C
=20A
18
nC
V
CC
= 400V
See Fig.8
54
V
GE
= 15V
T
J
= 25°C
ns
150
I
C
= 20A, V
CC
= 480V
110
V
GE
= 15V, R
G
= 10Ω
Energy losses include "tail"
mJ See Fig. 9,10, 14
0.45
T
J
= 150°C,
I
C
= 20A, V
CC
= 480V
ns
V
GE
= 15V, R
G
= 10Ω
Energy losses include "tail"
mJ See Fig. 10,11, 14
nH
Measured 5mm from package
V
GE
= 0V
pF
V
CC
= 30V
See Fig. 7
= 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 10Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40WS/LPbF
50
For both:
Triangular wave:
40
Load Current ( A )
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 28W
Clamp voltage:
80% of rated
30
Square wave:
60% of rated
voltage
20
10
Ideal diodes
0
0.1
1
10
100
A
1000
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
100
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150
°
C
10
10
T
J
= 25
°
C
1
1.0
V
GE
= 15V
80µs PULSE WIDTH
2.0
3.0
4.0
5.0
1
V
CC
= 50V
5µs PULSE WIDTH
5
7
9
11
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC40WS/LPbF
50
3.0
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 40 A
Maximum DC Collector Current(A)
40
2.5
30
2.0
I
C
= 20 A
I
C
= 10 A
20
10
1.5
0
25
50
75
100
125
150
T
C
, Case Temperature (
°
C)
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40WS/LPbF
4000
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 20A
16
C, Capacitance (pF)
3000
Cies
2000
12
8
Coes
1000
Cres
4
0
1
10
100
0
V
CE
, Collector-to-Emitter Voltage (V)
0
20
40
60
80
100
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.0
0.8
0.7
0.6
0.5
0.4
0.3
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
0.9
T
J
= 25
°
C
I
C
= 20A
10
R
G
=
10
Ω
10Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
40
A
1
I
C
=
20
A
I
C
=
10
A
10
R
G
, Gate Resistance
(Ω)
(Ohm)
20
30
40
50
60
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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