19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
参数名称 | 属性值 |
Reach Compliance Code | unknown |
雪崩能效等级(Eas) | 960 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V |
最大漏极电流 (ID) | 19 A |
最大漏源导通电阻 | 0.2 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 76 A |
认证状态 | COMMERCIAL |
表面贴装 | NO |
端子面层 | NOT SPECIFIED |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
IRF9540 | IRF9541 | RF1S9540 | IRF9542 | IRF9543 | |
---|---|---|---|---|---|
描述 | 19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 19A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA | 15A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 15A, 80V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
雪崩能效等级(Eas) | 960 mJ | 960 mJ | 960 mJ | 960 mJ | 960 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 100 V | 80 V | 100 V | 100 V | 80 V |
最大漏极电流 (ID) | 19 A | 19 A | 19 A | 15 A | 15 A |
最大漏源导通电阻 | 0.2 Ω | 0.2 Ω | 0.2 Ω | 0.3 Ω | 0.3 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB | TO-220AB | TO-262AA | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSIP-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | IN-LINE | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
最大脉冲漏极电流 (IDM) | 76 A | 76 A | 76 A | 60 A | 60 A |
认证状态 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
端子面层 | NOT SPECIFIED | TIN LEAD | - | TIN LEAD | TIN LEAD |
Base Number Matches | 1 | 1 | 1 | 1 | - |
是否无铅 | - | 含铅 | - | 含铅 | 含铅 |
是否Rohs认证 | - | 不符合 | - | 不符合 | 不符合 |
厂商名称 | - | Rochester Electronics | Rochester Electronics | Rochester Electronics | Rochester Electronics |
JESD-609代码 | - | e0 | - | e0 | e0 |
湿度敏感等级 | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
峰值回流温度(摄氏度) | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
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