PD - 91581A
IRG4PC50S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
C
Standard Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.28V
@V
GE
= 15V, I
C
= 41A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
70
41
140
140
± 20
20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
°C/W
g (oz)
1
www.irf.com
2/7/2000
IRG4PC50S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage
T
18
—
Temperature Coeff. of Breakdown Voltage — 0.75
— 1.28
Collector-to-Emitter Saturation Voltage
— 1.62
— 1.28
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-9.3
Forward Transconductance
U
17
34
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
1.36
I
C
= 41A
V
GE
= 15V
—
I
C
= 80A
See Fig.2, 5
V
—
I
C
= 41A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
=
100V, I
C
= 41A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
180
24
61
33
30
650
400
0.72
8.27
8.99
31
31
1080
620
15
13
4100
250
48
Max. Units
Conditions
280
I
C
= 41A
37
nC
V
CC
= 400V
See Fig. 8
92
V
GE
= 15V
—
—
T
J
= 25°C
ns
980
I
C
= 41A, V
CC
= 480V
600
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
13
—
T
J
= 150°C,
—
I
C
= 41A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 5.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 11, 14
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 5.0Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50S
100
F o r b o th :
T ria n g u la r wa v e :
I
80
D uty cy c le: 50%
T J = 125° C
T s ink = 90°C
Ga te drive as s pec ified
Load Current ( A )
P o w e r D i ss i p a tio n = 4 0 W
C la m p v o lta g e :
8 0 % o f ra te d
60
S q u are wa ve:
6 0 % o f ra te d
vo lt a g e
40
I
20
Id e a l di o de s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
1000
1000
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150
o
C
10
10
T
J
= 150
o
C
T
J
=
25
o
C
V
= 15V
20µs PULSE WIDTH
GE
1
10
T
J
= 25
o
C
V
= 50V
5µs PULSE WIDTH
CC
5
6
7
8
9
10
1
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PC50S
80
L IM IT E D B Y P A C K A G E
V
G E
= 15 V
2.2
V
CE
, Collector-to-Emitter Voltage(V)
M axim um D C C ollector C urrent (A)
V
= 15V
80 us PULSE WIDTH
GE
2.0
I
C
= 82 A
60
1.8
1.6
40
1.4
I
C
= 41 A
I
C
=20.5 A
20
1.2
1.0
0
25
50
75
100
125
150
0.8
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, C ase Tem perature (°C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
1
Thermal Response (Z
thJC
)
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50S
8000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
6000
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 41A
16
Cies
4000
12
8
2000
C
oes
C
res
4
0
1
10
100
0
0
40
80
120
160
200
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
10.0
Total Switching Losses (mJ)
9.5
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 41A
100
5.0Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
82
A
I
C
=
41
A
10
I
C
=
20.5
A
9.0
8.5
0
10
20
30
40
50
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
Gate Resistance
Ω )
R
G
, Gate Resistance
(
(Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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