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CAT28C65B
CAT28C65B
64K-Bit CMOS PARALLEL EEPROM
FEATURES
I
Fast read access times:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
I
Commercial, industrial and automotive
– 90/120/150ns
I
Low power CMOS dissipation:
temperature ranges
I
Automatic page write operation:
– Active: 25 mA max.
– Standby: 100
µ
A max.
I
Simple write operation:
– 1 to 32 bytes in 5ms
– Page load timer
I
End of write detection:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
I
Fast write cycle time:
– Toggle bit
–
DATA
polling
– RDY/BUSY
BUSY
I
100,000 program/erase cycles
I
100 year data retention
– 5ms max
I
CMOS and TTL compatible I/O
I
Hardware and software write protection
DESCRIPTION
The CAT28C65B is a fast, low power, 5V-only CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling, a RDY/BUSY pin and Toggle status bits
signal the start and end of the self-timed write cycle.
Additionally, the CAT28C65B features hardware and
software write protection.
The CAT28C65B is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
8,192 x 8
EEPROM
ARRAY
32 BYTE PAGE
REGISTER
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING,
TOGGLE BIT &
RDY/BUSY LOGIC
COLUMN
DECODER
I/O0–I/O7
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1009, Rev. E
Doc. No. 1009, Rev. E
CAT28C65B
PIN CONFIGURATION
DIP Package (P, L)
RDY/BUSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SOIC Package (J, W) (K, X)
RDY/BUSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Package (N, G)
A7
A12
RDY/BUSY
NC
TSOP Package (8mm x 13.4mm) (T13, H13)
4 3 2 1 32 31 30
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
TOP VIEW
29
28
27
26
25
24
23
22
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
OE
A11
A9
A8
NC
WE
VCC
RDY/BUSY
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
VCC
WE
13
21
14 15 16 17 18 19 20
I/O1
I/O2
VSS
NC
I/O3
I/O4
PIN FUNCTIONS
Pin Name
A
0
–A
12
I/O
0
–I/O
7
CE
OE
RDY/BSY
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Ready/Busy Status
Pin Name
WE
V
CC
V
SS
NC
Function
Write Enable
5 V Supply
Ground
No Connect
Doc. No. 1009, Rev. E
I/O5
NC
2
CAT28C65B
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(1)
T
DR(1)
V
ZAP(1)
I
LTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
10
5
100
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MODE SELECTION
Mode
Read
Byte Write (WE Controlled)
Byte Write (CE Controlled)
Standby, and Write Inhibit
Read and Write Inhibit
H
X
CE
L
L
L
X
H
WE
H
OE
L
H
H
X
H
I/O
D
OUT
D
IN
D
IN
High-Z
High-Z
Power
ACTIVE
ACTIVE
ACTIVE
STANDBY
ACTIVE
CAPACITANCE
T
A
= 25°C, F = 1.0 MHZ, V
CC
= 5V
Symbol
Test
Max.
C
I/O(1)
C
IN(1)
Input/Output Capacitance
Input Capacitance
10
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
3
Doc. No. 1009, Rev. E
CAT28C65B
D.C. OPERATING CHARACTERISTICS
V
CC
= 5V
±10%,
unless otherwise specified.
Limits
Symbol
I
CC
I
CCC(1)
I
SB
I
SBC(2)
I
LI
I
LO
V
IH(2)
V
IL(1)
V
OH
V
OL
V
WI
Parameter
V
CC
Current (Operating, TTL)
V
CC
Current (Operating, CMOS)
V
CC
Current (Standby, TTL)
V
CC
Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
3.5
–10
–10
2
–0.3
2.4
0.4
Min.
Typ.
Max.
30
25
1
100
10
10
V
CC
+0.3
0.8
Units
mA
mA
mA
µA
µA
µA
V
V
V
V
V
I
OH
= –400µA
I
OL
= 2.1mA
Test Conditions
CE = OE = V
IL
,
f = 1/t
RC
min, All I/O’s Open
CE = OE = V
ILC
,
f = 1/t
RC
min, All I/O’s Open
CE = V
IH
, All I/O’s Open
CE = V
IHC
,
All I/O’s Open
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
,
CE = V
IH
Note:
(1) V
ILC
= –0.3V to +0.3V.
(2) V
IHC
= V
CC
–0.3V to V
CC
+0.3V.
Doc. No. 1009, Rev. E
4
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