1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is ± 5 %
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations
MMSZ5225 to MMSZ5267
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
UNIT
V
mA
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
1.7 to 20
Thermal equilibrium
Single
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
1N5221B to 1N5267B
1N5221B to 1N5267B
ORDERING CODE
1N5221B to 1N5267B-series-TR
1N5221B to 1N5267B-series-TAP
TAPED UNITS PER REEL
10 000 per 13" reel
10 000 per ammopack
(52 mm tape)
MINIMUM ORDER QUANTITY
30 000/box
30 000/box
PACKAGE
PACKAGE NAME
DO-35
WEIGHT
125 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
I = 4 mm, T
L
= constant
TEST CONDITION
T
L
25 °C
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
500
P
tot
/V
Z
300
175
- 65 to + 175
1.1
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.0, 31-Jan-12
Document Number: 85588
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
MAX.
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
MAX.
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
V
Z
at I
ZT1
V
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
NOM.
2.4
2.5
2.7
2.8
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
TEST CURRENT
I
ZT1
mA
I
ZT2
DYNAMIC RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1 (1)
MAX.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
Z
ZK
at I
ZT2
TEMPERATURE
COEFFICIENT
VZ
%/K
TYP.
- 0.085
- 0.085
- 0.08
- 0.08
- 0.075
- 0.07
- 0.065
- 0.06
0.055
0.03
0.03
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.09
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
Note
(1)
Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
Rev. 2.0, 31-Jan-12
Document Number: 85588
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
R
thJA
- Therm. Resist. Junction Ambient (K/W)
500
400
300
l
200
100
T
L
= constant
0
0
5
10
15
20
95 9611
Vishay Semiconductors
P
tot
- Total Power Dissipation (mW)
600
500
400
300
200
100
0
0
80
120
160 200
40
T
amb
- Ambient Temperature (°C)
l
I - Lead Length (mm)
95 9602
Fig. 1 -
Thermal Resistance vs. Lead Length
Fig. 4 -
Total Power Dissipation vs. Ambient Temperature
1000
15
T
j
= 25 °C
100
TK
VZ
- Temperature Coefficient
of
V
Z
(10
-4
/K)
V
Z
-
Voltage
Change (mV)
10
5
I
Z
= 5 mA
0
I
Z
= 5 mA
10
1
0
95 9598
-5
5
10
15
20
25
95 9600
0
10
20
30
40
50
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 2 -
Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Fig. 5 -
Temperature Coefficient of V
Z
vs. Z-Voltage
1.3
200
V
Ztn
- Relative Voltage Change
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
C
D
- Diode Capacitance (pF)
V
Ztn
= V
Zt
/V
Z
(25 °C)
150
V
R
= 2
V
T
j
= 25 °C
100
1.1
1.0
0.9
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
50
0.8
- 60
95 9599
0
0
60
120
180
240
95 9601
0
5
10
15
20
25
T
j
- Junction Temperature (°C)
V
Z
- Z-Voltage (V)
Fig. 3 -
Typical Change of Working Voltage vs.
Junction Temperature
Rev. 2.0, 31-Jan-12
Fig. 6 -
Diode Capacitance vs. Z-Voltage
Document Number: 85588
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
50
P
tot
= 500 mW
T
amb
= 25 °C
100
I
F
- Forward Current (mA)
10
T
j
= 25 °C
40
1
I
Z
- Z-Current (mA)
1.0
30
0.1
20
0.01
10
0.001
0
95 9605
0
15
95 9607
0.2
0.4
0.6
0.8
20
25
30
35
V
F
- Forward
Voltage
(V)
V
Z
- Z-Voltage (V)
Fig. 9 -
Z-Current vs. Z-Voltage
Fig. 7 -
Forward Current vs. Forward Voltage
100
1000
80
r
Z
- Differential Z-Resistance (Ω)
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
60
I
Z
= 1 mA
100
5 mA
10 10 mA
40
20
0
0
95 9604
1
4
6
8
12
20
95 9606
T
j
= 25 °C
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Fig. 8 -
Z-Current vs. Z-Voltage
Fig. 10 -
Differential Z-Resistance vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
R
thJA
= 300 K/W
T = T
jmax
- T
amb
t
p
/T = 0.01
t
p
/T = 0.1
t
p
/T = 0.02
i
ZM
= (-
V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
t
p
/T = 0.05
10
1
10
-1
10
0
10
1
t
p
- Pulse Length (ms)
Fig. 11 -
Thermal Response
10
2
95 9603
Rev. 2.0, 31-Jan-12
Document Number: 85588
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
DO-35_1N52xx
Cathode Identification
Vishay Semiconductors
Ø 0.55 max. [0.022]
Ø 0.4 min. [0.015]
1.7 [0.067]
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 1 - Date: 19. December 2011
Document no.: S8-V-3906.04-031(4)
94 12648
Rev. 2.0, 31-Jan-12
Document Number: 85588
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1.5 [0.059]
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
