GaAs Schottky
Mixer Diodes
Features
q
q
q
q
MA40400 Series
V3.00
Case Styles
q
q
q
Very Low Noise Figure from X through W-Band
Low Junction Capacitance
Low Series Resistance
Wide Range of Available Product
– Packaged Diodes
– Chips
– Beam Leads
– Anti-Parallel Beam Leads
– Bridge Quads
– Ring Quads
– Tees
Superior Dynamic Range to Silicon Diodes
Minimum Breakdown Voltage is 5 Volts
Minimum 5 Gram Beam Strength For Beam Leads
276
1010
Description
This family of Gallium Arsenide Schottky diodes is
fabricated with noble metal metallization and silicon
nitride passivation to assure good reliability and low
series resistance.
These diodes are designed to give superior noise figure
from X- through W-band. They are available in a wide
range of packages, chip and beam lead configurations.
The beam lead types include single beam leads, tees,
anti-parallel pairs, ring and bridge quads.
These diodes have lower series resistance than equivalent
junction capacitance silicon schottky diodes. This low
series resistance results in superior conversion loss and
noise figure.
The higher reverse voltage and low series resistance of
Gallium Arsenide Bridge Quads make them particularly
attractive for use in AM modulation and/or sampling cir-
cuits for signal processing and frequency generation.
119
120
272
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
1
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
GaAs Schottky Mixer Diodes
Absolute Maximum Ratings at 25°C
Parameter
Operating and Storage
Temperature Range of Junctions
Maximum Power Dissipation
(Derate Linearity to 0 at 150°C)
MA40400 Series
V3.00
Absolute Maximum
-65° to +150°C
at 25°C
75 mW/Junction
235°C for
10 seconds
5 grams Min.
Soldering Temperature
(Packaged Diodes)
Beam Lead Strength
Electrical Specifications at 25°C
Packaged Diodes
Specifications
Maximum
4
Noise
Figure
NF (dB)
6.5
6.5
6.5
6.5
6.5
6.5
I
F
4
Impedance
Min./Max.
(Ohms)
250 / 500
250 / 500
250 / 500
250 / 500
250 / 500
250 / 500
Minimum
5
Reverse
Voltage
V
B
5
5
5
5
5
5
Typical Characteristics
Nominal
1, 3
Junction
Capacitance
Cj (pF)
0.07
0.06
0.07
0.06
0.07
0.06
Series
Resistance
R
S
Min./Max.
(Ohms)
3/6
3/6
3/6
3/6
3/6
3/6
Model
Number
MA40403
MA40404
MA40407
MA40408
MA40411
MA40412
Case
Style
119
119
120
120
276
276
LO Test
Frequency
(GHz)
24
36
24
36
24
36
Beam Leads and Chips
Specifications
Series
3
Resistance
Min./Max.
(Ohms)
3/6
3/6
3/6
4 / 10
Junction
1
Capacitance
Min./Max.
(pF)
0.050 / 0.060
0.055 / 0.075
0.050 / 0.070
0.030 / 0.055
Minimum
5
Reverse
Voltage
V
R
5
5
5
5
Typical Characteristics
I
F
Impedance
Mln./Max.
(Ohms)
250 / 500
250 / 500
250 / 500
250 / 500
Nominal
Noise
Figure
(dB)
6.5
6.5
6.5
7.0
10
Model
Number
MA40414
MA40415
MA40416
MA40417
Case
Style
135
1010
1010
1010
Frequency
Band
Ka
K
Ka
W
Anti-Parallel Beam Leads
Specifications
Maximum
5
Junction
Capacitance
Difference
∆C
j
(pF)
0.025
Maximum
2
Forward
Voltage
Difference
∆V
F
(Volts)
0.015
Typical
Character-
istics
6
5
Model
Number
MA40422
Case
Style
1013
Frequency
Band
K-Ka
Series
Resistance
Min./Max.
R
S
(Ohms)
3/6
3
Junction
Capacitance
Min./Max.
C
j
(pF)
0.10 / 0.20
Minimum
Reverse
Voltage
V
R
5.0
Nominal
2
Forward
Voltage
V
F
(Volts)
0.700
Specifications Subject to Change Without Notice.
2
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
GaAs Schottky Mixer Diodes
Electrical Specifications at 25°C
Bridge Quad
Specifications
Maximum
3
Series
Resistance
Min./Max.
R
S
(Ohms)
3/6
Maximum
7, 8
Junction
Capacitance
Difference
∆Cj
(pF)
0.025
MA40400 Series
V3.00
Typical
Character-
istics
7, 8
5
Model
10
Number
MA40418
Case
Style
963
Frequency
Band
L-K
Junction
Capacitance
Min./Max
Cj (pF)
0.05 / 0.10
Minimum
Reverse
Voltage
V
R
5
Maximum
2
Forward
Voltage
Difference
∆V
F
(Volts)
0.02
Nominal
2
Forward
Voltage
V
F
(Volts)
0.7
Ring Quads
Specifications
Maximum
3
Series
Resistance
Min./Max.
R
S
(Ohms)
3/6
3/6
Maximum
7, 8
Junction
Capacitance
Difference
∆Cj
(pF)
0.025
0.025
Maximum
2
Forward
Voltage
Difference
∆V
F
(Volts)
0.02
0.02
Typical
Character-
istics
Minimum
5
Reverse
Voltage
V
R
5.0
5.0
Nominal
2
Forward
Voltage
V
F
(Volts)
0.7
0.7
Model
10
Number
MA40419
MA40419
Case
Style
963
1108
Frequency
Band
L-K
L-K
Junction
7, 8
Capacitance
Min./Max
Cj (pF)
0.05 / 0.10
0.05 / 0.10
Specifications
Maximum
3
Series
Resistance
Min./Max.
R
S
(Ohms)
3/6
Junction
7, 8
Capacitance
Min./Max.
Cj (pF)
0.05 / 0.10
Maximum
7, 8
Junction
Capacitance
Difference
∆Cj
(pF)
0.025
Maximum
2
Forward
Voltage
Difference
∆V
F
0.02
Nominal
2
Forward
Voltage
V
F
(Volts)
0.7
Typical Characteristics
Nominal
5
Reverse
Voltage
V
R
(Ohms)
5
Nominal
4
Noise
Figure
NF (dB)
6
Model
10
Number
MA40421
Case
Style
272
Frequency
Band
C-Ku
Tees
Notes:
1. C
j
is measured at V
R
= 0V and f = 1.0 MHz.
2. V
F
is measured at I
F
= 1.0 mA.
3. Series Resistance, R
s
, is determined by subtracting the junction
resistance Rj, from the measured value of 10 mA dynamic (slope)
resistance, R
T
:
R
s
= R
T
- Rj ohms
Junction resistance is computed from:
Rj = 26/l
F
I
F
= 10 mA
I
F
is the forward current in mA
4. Noise figure measurements are single sideband noise figure with N
IF
=
1.5 dB minimum. The noise figure of chips and beam lead types are
performed on a sample of the lot. Chips are tested in a package. Beam
leads are tested in a stripline holder The test conditions are as follows:
LO Power
6.0 dBm
LO Frequency
16.0 GHz
24.0 GHz
35.0 GHz
f
if
= 30 MHz
j
R = 22 Ohms
Specifications Subject to Change Without Notice.
5. V
R
is measured at l
R
= 10 µA.
6. C
j
is measured at V
R
= 0V and f = 1.0 MHz. C
j
of anti-parallel diodes is
comprised of the capacitance of two diode junctions in parallel.
7. C
j
is measured between adjacent leads of device at V
R
= 0V and
f = 1 MHz.
8. C
T
= C
j
+ C
P
C
T
is total capacitance
C
j
is junction capacitance
C
P
is packaged capacitance
9. Conversion loss at 94 GHz with LO power ~ 8-12 dBm.
10.The part number includes the case style as a suffix. i.e. MA40418 -
1169 is a beam-lead Tee; MA40418-963 is the part in the
case style 963.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
3
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
GaAs Schottky Mixer Diodes
Typical Performance Curves
DIODE CURRENT vs FORWARD VOLTAGE
(MA40403 - 40412 PACKAGED G
A
As CHIPS)
MA40400 Series
V3.00
DIODE CURRENT vs FORWARD VOLTAGE
(MA40415, 40416 G
A
As BEAM LEAD)
NOISE FIGURE vs LOCAL OSCILLATOR POWER
(MA40400 SERIES)
I
F
IMPEDENCE vs LOCAL OSCILLATOR DRIVE
WITH R
L
= 10 OHMS (MA40400 SERIES)
LOCAL OSCILLATOR POWER in dBm
Specifications Subject to Change Without Notice.
4
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
M/A-COM, Inc.
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
GaAs Schottky Mixer Diodes
Case Styles
(See appendix for complete styles)
MA40400 Series
V3.00
1108
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
s
5
Asia/Pacific: Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
s
Europe: Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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