PD - 93804B
Applications
l
High frequency DC-DC converters
HEXFET
®
Power MOSFET
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
V
DSS
R
DS(on)
max
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
150V
0.045
:
I
D
41A
TO-220AB TO-220 FullPak
D
2
Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Max.
41
29
164
3.1
200
48
1.3
0.32
± 30
2.7
-55 to + 175
Units
A
W
c
Power Dissipation, D Pak
Power Dissipation, TO-220
Power Dissipation, Fullpak
Linear Derating Factor, TO-220
Linear Derating Factor, Fullpak
2
W/°C
V
V/ns
°C
V
GS
dv/dt
T
J
T
STG
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
e
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θcs
R
θJA
R
θJA
R
θJA
Junction-to-Case
Junction-to-Case, Fullpak
Case-to-Sink, Flat, Greased Surface
Typ.
–––
–––
0.50
–––
–––
–––
Max.
0.75
3.14
–––
62
40
65
Units
°C/W
h
Junction-to-Ambient, D Pak
i
Junction-to-Ambient, TO-220
2
h
Junction-to-Ambient, Fullpak
Notes
through
are on page 12
www.irf.com
1
07/16/03
IRFB/IRFIB/IRFS/IRFSL41N15D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
0.17
–––
–––
–––
–––
–––
–––
–––
–––
0.045
5.5
25
250
100
-100
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
Ω
V
GS
= 10V, I
D
= 25A
f
V
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
72
21
35
16
63
25
14
2520
510
110
3090
230
250
–––
110
31
52
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
pF
ns
nC
S
Conditions
V
DS
= 50V, I
D
= 25A
I
D
= 25A
V
DS
= 120V
V
GS
= 10V
V
DD
= 75V
I
D
= 25A
R
G
= 2.5Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
Max.
470
25
20
f
f
g
Avalanche Characteristics
Ã
d
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
170
1.3
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
41
A
164
1.3
260
1.9
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
f
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
2
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IRFB/IRFIB/IRFS/IRFSL41N15D
1000
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
9.0V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
100
100
10
10
6.0V
6.0V
1
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 41A
I
D
, Drain-to-Source Current (A)
2.5
100
2.0
T
J
= 175
°
C
1.5
T
J
= 25
°
C
10
1.0
0.5
1
6
7
8
V DS = 25V
20µs PULSE WIDTH
9
10
11
0.0
-60 -40 -20 0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRFB/IRFIB/IRFS/IRFSL41N15D
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds
Crss = C gd
Coss = C ds + Cgd
20
I
D
= 25A
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
V
GS
, Gate-to-Source Voltage (V)
SHORTED
16
10000
C, Capacitance(pF)
Ciss
1000
12
Coss
100
8
Crss
4
10
1
10
100
1000
0
0
20
40
60
FOR TEST CIRCUIT
SEE FIGURE 13
80
100
120
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175
°
C
I
D
, Drain Current (A)
100
100
10us
10
100us
T
J
= 25
°
C
1
10
1ms
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFB/IRFIB/IRFS/IRFSL41N15D
50
V
DS
V
GS
R
D
40
I
D
, Drain Current (A)
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
30
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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