FMMT549 — PNP Low Saturation Transistor
August 2009
FMMT549
PNP Low Saturation Transistor
Features
• ThIs device is designed with high current gain and low saturation voltage
with collector currents up to 2A continuous.
•
Sourced from process PB.
3
2
SuperSOT-23
1
Marking : 549
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T
A
= 25°C unless otherwise noted
Parameter
Value
-30
-35
-5
-1
-2
150
-55 to +150
Unit
V
V
V
A
A
°C
°C
Collector Current - Continuous
- Peak Pulse Current
Junction Temperature
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations
Thermal Characteristics*
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation, by R
θJA
Derate above 25°C
Thermal Resistance, Junction to Ambient
Value
500
4
250
Unit
mW
mW/°C
°C/W
* Device mounted on FR-4 PCB 4.5” X 5”, mounting pad 0.02 in
2
of 2 oz copper.
© 2009 Fairchild Semiconductor Corporation
FMMT549 Rev. C1
1
www.fairchildsemi.com
FMMT549 — PNP Low Saturation Transistor
Electrical Characteristics
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
T
A
= 25°C unless otherwise noted
Parameter
Conditions
Min.
Max.
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= -10mA, I
B
= 0
I
C
= -100μA, I
E
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 100°C
V
EB
= -4.0V, I
C
=0
-30
-35
-5.0
-100
-10
-100
V
V
V
nA
μA
nA
On Characteristics*
h
FE
DC Current Gain
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1A
V
CE
= -2.0V, I
C
= -2A
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, V
CE
= -2.0V
70
100
80
40
300
V
CE
(sat) Collector-Emitter Saturation Voltage
V
BE
(sat)
V
BE
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
-500
-750
-1.25
-1.0
mV
mV
V
V
Small Signal Characteristics
f
T
C
ob
Current Gain Bandwidth Product
Output Capacitance
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
100
25
MHz
pF
* DC Item are tested by Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2009 Fairchild Semiconductor Corporation
FMMT549 Rev. C1
2
www.fairchildsemi.com
FMMT549 — PNP Low Saturation Transistor
Typical Performance Characteristics
Collector- Emitter Voltage vs
Collector current
800
700
4mA
3.5mA
Current Gain vs Collector Current
600
V
ce
= 2.0V
Collector Current, Ic [mA]
500
600
500
400
300
200
100
0
0
1
2
3mA
2.5mA
2mA
1.5mA
1mA
Ib=0.5mA
H
FE
- CURRENT GAIN
400
300
125°C
25°C
200
100
0
0.0001
- 40°C
3
4
5
Collector-Emitter Voltage, Vce[V]
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
BESAT
-BASE-EMITTER SATURATION VOLTAGE(V)
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter On Voltage vs
Collector Current
1.6
V
ce
= 2.0V
Base-Emitter Saturation
Voltage vs Collector Current
1.6
1.4
1.2
1
0.8
0.6
125 °C
25 °C
- 40 °C
1.4
1.2
1
- 40 °C
β = 10
0.8
0.6
25 °C
0.4
0.2
0.0001
125 °C
0.4
0.2
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
- 40°C
Input/Output Capacitance vs
Reverse Bias Voltage
120
f V
ce
= 2.0V
= 1.0MHz
1
0.8
0.6
CAPACITANCE (pf)
125°C
100
C
ibo
80
60
40
20
0
0.1
C
obo
25°C
0.4
0.2
0
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.5 1
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
© 2009 Fairchild Semiconductor Corporation
FMMT549 Rev. C1
3
www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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