TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Product Description
Qorvo’s TGA2595 is a balanced Ka-band power amplifier
fabricated on Qorvo’s 0.15 um GaN on SiC process. The
balanced configuration supports low return loss and
improves robustness into non-ideal loads.
Operating from 27.5 to 31 GHz, it achieves 9 W saturated
output power, power-added efficiency of 22 % and 30 dB
small signal gain. Along with excellent linear
characteristics, the TGA2595 is ideally suited to support
both commercial and defense related satellite
communications.
To simplify system integration, the TGA2595 is fully
matched to 50 Ω with integrated DC blocking caps on both
I/O ports.
The TGA2595 is 100 % DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Product Features
Product Features
to 31 GHz
Frequency
Part No.
Range: 27.5
Description
P
OUT
: 39 dBm (P
IN
= 22 dBm), CW
TGA2595
27.5 – 31GHz 9W GaN Power Amplifier
= 22 dBm), CW
??PAE: 22 % (P
IN
Samples (2 pcs. pack)
??Small Signal Gain: 30 dB Board for TGA2595
Evaluation
Return Loss: 20 dB
IM3 @ 33 dBm/tone: −30 dBc
IM5 @ 33 dBm/tone: −35 dBc
Bias: V
D
= +20 V, I
DQ
= 280-560 mA, V
G
≈ −2.5 V Typical
Chip Dimensions: 3.60 x 3.24 x 0.10 mm
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
2 3 4
5
6
Applications
Satellite Communications
1
7
Ordering Information
12 11 10
9
8
Part No.
TGA2595
TGA2595S2
TGA2595EVB
Description
27.5 – 31GHz 9W GaN Power Amplifier
Samples (2 pcs. pack)
Evaluation Board for TGA2595
Data Sheet Rev. B, Oct 31, 2018
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TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Drain Voltage (V
D
)
Gate Voltage Range (V
G
)
Drain Current (I
D
)
Gate Current (I
G
)
Power Dissipation (P
DISS
), CW, 85°C
Input Power (P
IN
), CW, 50 Ω,
V
D
=22 V, I
DQ
=280 mA, 85 °C
Input Power (P
IN
), CW, 10:1 VSWR,
V
D
=22 V , I
DQ
=280 mA, 25 °C
Channel Temperature (T
CH
)
Mounting Temperature (30 seconds)
Storage Temperature
Value / Range
29.5
−5 to 0 V
2.8 A
See chart
44 W
30 dBm
25 dBm
275 °C
320 °C
−40 to 150 °C
I
G
_Maximum (mA)
100
80
60
40
140
120
Recommended Operating Conditions
Parameter
Drain Voltage (V
D
)
Drain Current, Quiescent (I
DQ
)
Drain Current, RF (I
D_Drive
)
Gate Voltage Typ. Range (V
G
)
Operating Temp. Range
−40
Min
Typ
+20
280-560
See charts page 6
−2 to −3
+25
+85
Max Units
V
mA
mA
V
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Gate Current Maximum vs. T
CH
vs. Stage
Total
Stage 3
Stage 2
Stage 1
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress ratings
only, and functional operation of the device at these conditions
is not implied.
20
0
125
135
145
155
165
175
185
195
205
215
225
Channel Temperature (
0
C)
Electrical Specifications
Parameter
Operational Frequency Range
Output Power at Saturation, P
SAT
Power Added Efficiency, PAE
Small Signal Gain, S21
Input Return Loss, IRL
Output Return Loss, ORL
3
RD
Intermodulation Products, IM3
5
th
Intermodulation Products, IM5
P
SAT
Temperature Coefficient
S21 Temperature Coefficient
Notes:
1.
2.
Conditions
(1) (2)
P
IN
= +22 dBm
P
IN
= +22 dBm
Min
27.5
37
24
Typ
39
22
30
20
20
Max
31
Units
GHz
dBm
%
dB
dB
dB
dBc
dBc
dBm/°C
dB/°C
P
OUT/TONE
= +33 dBm, I
DQ
= 325 mA
P
OUT/TONE
= +33 dBm, I
DQ
= 325 mA
T
DIFF
= +25°C to +85°C; P
IN
= +22 dBm
T
DIFF
= −40°C to +85°C
−30
−35
−0.01
−0.09
Test conditions unless otherwise noted: CW, V
D
= +20 V, I
DQ
= 560 mA, V
G
= -2.5 V +/- 0.5 V typical , T
BASE
= +25 °C, Z
0
= 50 Ω
T
BASE
is back side of carrier plate
Data Sheet Rev. B, Oct 31, 2018
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TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
) under RF Drive
Thermal Resistance (θ
JC
)
Channel Temperature (T
CH
) under RF Drive
Test Conditions
For I
DQ
= 280 mA:
T
BASE
= 85 °C, V
D
= +20 V, I
D_Drive
= 1600 mA,
P
IN
= 22 dBm, P
OUT
= 39 dBm, P
DISS
= 24 W
For I
DQ
= 560 mA:
T
BASE
= 85 °C, V
D
= +20 V, I
D_Drive
= 1780 mA,
P
IN
= 22 dBm , P
OUT
= 39.5 dBm, P
DISS
= 26.7 W
Value
2.83
153
Units
ºC/W
°C
2.82
160
ºC/W
°C
Notes:
1.
Thermal resistance measured to back of carrier plate. MMIC mounted on 20 mils CuMo carrier using 1.5 mil 80/20 AuSn.
2.
Channel temperature indicated is an IR scan equivalent temperature. Thermal resistance is calculated using this value. Additional
information can be found in the Qorvo Applications Note “GaN Device TCHMAX Theta-JC and Reliability Estimates,” located here
https://www.qorvo.com/products/d/da006480
Data Sheet Rev. B, Oct 31, 2018
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TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Typical Performance – Small Signal
Test conditions unless otherwise noted: CW, V
D
= +20 V, I
DQ
= 280 mA and 560mA, T
BASE
=+25 °C
40
35
30
Gain vs. Frequency vs. Temperature
V
D
= 20 V, I
DQ
= 280 mA
40
35
30
Gain vs. Frequency vs. Temperature
V
D
= 20 V, I
DQ
= 560 mA
S21 (dB)
S21 (dB)
25
25
+85 °C
20
15
10
5
0
25
26
27
28
29
30
31
32
33
34
35
+85 °C
+25 °C
−40 °C
20
15
10
5
0
25
26
27
28
+25 °C
−40 °C
29
30
31
32
33
34
35
Frequency (GHz)
Frequency (GHz)
0
-5
-10
Input Return Loss vs. Freq. vs. Temperature
V
D
= 20 V, I
DQ
= 280 mA
0
-5
Input Return Loss vs. Freq. vs. Temperature
V
D
= 20 V, I
DQ
= 560 mA
+85 °C
+85 °C
−40 °C
+25 °C
-10
+25 °C
−40 °C
S11 (dB)
-15
-20
-25
-30
25
26
27
28
29
30
31
32
33
34
35
S11 (dB)
-15
-20
-25
-30
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Frequency (GHz)
0
-5
-10
Output Return Loss vs. Freq. vs. Temp.
V
D
= 20 V, I
DQ
= 280 mA
0
-5
-10
Output Return Loss vs. Freq. vs. Temp.
V
D
= 20 V, I
DQ
= 560 mA
S22 (dB)
+25 °C
S22 (dB)
+85 °C
-15
-20
-25
-30
25
26
27
28
−40 °C
-15
-20
-25
-30
+85 °C
+25 °C
−40 °C
29
30
31
32
33
34
35
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Frequency (GHz)
Data Sheet Rev. B, Oct 31, 2018
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TGA2595
27.5 – 31 GHz 9 W GaN Power Amplifier
Typical Performance – Large Signal
Test conditions unless otherwise noted: CW, V
D
= +20 V, I
DQ
= 280 mA and 560mA, T
BASE
=+25 °C
42
41
40
Output Power vs. Freq. vs. Temperature
V
D
= 20 V, I
DQ
= 280 mA, P
IN
= 22 dBm
42
41
40
Output Power vs. Freq. vs. Temperature
V
D
= 20 V, I
DQ
= 560 mA, P
IN
= 22 dBm
Output Power (dBm)
39
38
Output Power (dBm)
39
38
+85 °C
+25 °C
37
36
35
34
33
32
26
27
28
29
+85 °C
+25 °C
37
36
35
34
33
32
30
31
32
33
34
35
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Frequency (GHz)
30
28
PAE vs. Frequency vs. Temperature
V
D
= 20 V, I
DQ
= 280 mA, P
IN
= 22 dBm
30
28
PAE vs. Frequency vs. Temperature
V
D
= 20 V, I
DQ
= 560 mA, P
IN
= 22 dBm
Power Added Efficiency (%)
26
24
22
Power Added Efficiency (%)
26
24
22
20
18
16
14
12
10
26
27
28
29
30
+85 °C
+25 °C
20
18
16
14
12
10
+85 °C
+25 °C
31
32
33
34
35
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Frequency (GHz)
42
40
Output Power vs. Input Power vs. Frequency
V
D
= 20 V, I
DQ
= 280 mA
Temp. = +25 °C
42
40
Output Power vs. Input Power vs. Frequency
V
D
= 20 V, I
DQ
= 560 mA
Temp. = +25 °C
Output Power (dBm)
36
34
32
30
27 GHz
28 GHz
Output Power (dBm)
38
38
36
34
32
30
27 GHz
28 GHz
29 GHz
30 GHz
31 GHz
32 GHz
29 GHz
28
26
24
0
2
4
6
8
10
12
14
30 GHz
31 GHz
32 GHz
28
26
24
16
18
20
22
24
26
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Input Power (dBm)
Input Power (dBm)
Data Sheet Rev. B, Oct 31, 2018
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