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3623A-K

产品描述Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
产品类别分立半导体    晶体管   
文件大小139KB,共4页
制造商NEC(日电)
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3623A-K概述

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

3623A-K规格参数

参数名称属性值
厂商名称NEC(日电)
包装说明IN-LINE, R-PSIP-T3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.15 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)1600
JESD-30 代码R-PSIP-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
Base Number Matches1

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DATA SHEET
SILICON TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
• High h
FE
:
h
FE
= 1000 to 3200 @V
CE
= 5.0 V, I
C
= 1.0 mA
• Low V
CE(sat)
:
V
CE(sat)
= 0.07 V TYP. @I
C
/I
B
= 50 mA/5.0 mA
• High V
EBO
:
V
EBO
: 12 V (2SC3623)
V
EBO
: 15 V (2SC3623A)
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
P
T
T
j
T
stg
12
150
250
150
−55
to +150
Ratings
2SC3623 2SC3623A
60
50
15
Unit
V
V
V
mA
mW
°C
°C
Electrode connection
1. Emitter (E)
2. Collector (C)
3. Base (B)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13521EJ4V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
1998
2002

3623A-K相似产品对比

3623A-K 2SC3623-A 3623A-L 3623A
描述 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
厂商名称 NEC(日电) NEC(日电) NEC(日电) NEC(日电)
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown compliant unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.15 A 0.15 A 0.15 A 0.15 A
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 1600 200 1000 200
JESD-30 代码 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
元件数量 1 1 1 1
端子数量 3 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE
极性/信道类型 NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz 250 MHz 250 MHz
Base Number Matches 1 1 1 1

 
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