Bulletin I27133 rev. D 09/97
IRK.105 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
NEW ADD-A-pak
TM
Power Modules
105 A
Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configu-
rations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*)
I
TSM
@ 50Hz
I
FSM
@ 60Hz
I t
2
IRK.105
105
235
1785
1870
15.91
14.52
159.1
400 to 1600
- 40 to 150
- 40 to130
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
o
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
T
J
(*) As AC switch.
C
C
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1
IRK.105 Series
Bulletin I27133 rev. D 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
06
08
IRK.105
10
12
14
16
V
RRM
, maximum
repetitive
peak reverse voltage
V
400
600
800
1000
1200
1400
1600
V
RSM
, maximum
V
DRM
, max. repetitive I
RRM
non-repetitive
peak off-state voltage, I
DRM
peak reverse voltage
gate open circuit
130°C
V
500
700
900
1100
1300
1500
1700
V
400
600
800
1000
1200
1400
1600
mA
20
On-state Conduction
Parameters
I
T(AV)
I
F(AV)
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
or
I
FSM
Max. peak, one cycle
non-repetitive on-state
or forward current
235
A
1785
1870
1500
1570
2000
2100
I
2
t
Max. I
2
t for fusing
15.91
14.52
11.25
10.27
20.00
18.30
I
√t
2
IRK.105
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
105
I
(RMS)
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
reapplied
or
I
(RMS)
Sinusoidal
half wave,
Initial T
J
= T
J
max.
No voltage
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
No voltage
reapplied
100% V
RRM
reapplied
T
J
= 25
o
C,
no voltage reapplied
Initial T
J
= T
J
max.
KA
2
s
Max. I
√t
for fusing (1)
2
159.1
0.80
0.85
2.37
2.25
1.64
K A
√s
2
t= 0.1 to 10ms, no voltage reappl. T
J
=T
J
max
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
V
T(TO)
Max. value of threshold
voltage (2)
r
t
V
mΩ
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
V
TM
V
FM
di/dt
V
T
J
= 25
o
C, from 0.67 V
DRM
,
150
200
mA
400
A/µs
I
TM
=π x I
T(AV)
,
I = 500mA,
g
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
(3) 16.7% x
π
x I
AV
< I <
π
x I
AV
I
H
I
L
Max. holding current
Max. latching current
(1) I
2
t for time t
x
=
I
2
√
t x
√
t
x
(4) I >
π
x I
AV
(2) Average power
=
V
T(TO)
x I
T(AV)
+
r
t
x (I
T(RMS)
)
2
2
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IRK.105 Series
Bulletin I27133 rev. D 09/97
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
IRK. 105
12
3
3
10
4.0
2.5
1.7
270
150
80
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
V
GD
I
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
T
J
= 25°C
T
J
= 125°C
0.25
6
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
V
INS
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
RMS isolation voltage
2500 (1 min)
V
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V/µs
shorted
T
J
= 130
o
C, linear to 0.67 V
DRM
,
gate open circuit
50 Hz, circuit to base, all terminals
20
mA
T
J
= 130
o
C, gate open circuit
IRK.105
Units
Conditions
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT105/16 S90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating
temperature range
Storage temp. range
IRK.105
- 40 to 130
Units
Conditions
°C
- 40 to 150
R
thJC
Max. internal thermal
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
Nm
3
83 (3)
TO-240AA
g (oz)
JEDEC
0.135
K/W
Mounting surface flat, smooth and greased.
Flatness
<
0.03 mm; roughness
<
0.02 mm
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Per module, DC operation
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3
IRK.105 Series
Bulletin I27133 rev. D 09/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.105
Sine half wave conduction
180
o
0.04
120
o
0.05
90
o
0.06
60
o
0.08
30
o
0.12
180
o
0.03
Rect. wave conduction
120
o
0.05
90
o
0.06
60
o
0.08
30
o
0.12
Units
°C/W
Outlines Table
IRKT105/.. (*)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(1.18 ± 0.04)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
IRKH105/.. (*)
Screws M5 x 0.8
18 R EF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0. 03)
(1.18 ± 0.04)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
30 ± 0.1
(0.24 ± 0.01)
24 ± 0.5
5.8 ± 0.25
(0.94 ± 0.02)
(0.23 ± 0.01)
6.3 ± 0.3
(0.25 ± 0.01)
6.3 ± 0.3
(0.25 ± 0.01)
(0.24 ± 0.01)
6.1 ± 0.3
6.1 ± 0.3
24 ± 0.5
(0.94 ± 0.02)
2
3
1
20.5 ± 0.75
(0.81 ± 0.03)
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
20.5 ± 0.75
(0.81 ± 0.03)
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
4 5
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
92 ± 0.5
(3.62 ± 0.02)
IRKL105/.. (*)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
30 ± 0.5
(1.18 ± 0.02)
29 ± 0.5
(1.13 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
(1.18 ± 0.04)
30 ± 0.1
6.3 ± 0.3
(0.25 ± 0.01)
(0.24 ± 0.01)
6.1 ± 0.3
20.5 ± 0.75
(0.81 ± 0.03)
2
3
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02)
80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
All dimensions in millimeters (inches)
(*)
For terminals connections, see Circuit configurations Table
NOTE: To order the Optional Hardware see Bulletin I27900
4
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76
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
4 5
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
2
3
76
30 ± 0.1
IRK.105 Series
Bulletin I27133 rev. D 09/97
Circuit Configurations Table
IRKT
(1)
~
IRKH
(1)
~
IRKL
(1)
~
+
(2)
+
(2)
+
(2)
-
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
-
(3)
-
(3)
K2 G2
(7) (6)
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
-
-
-
-
-
T
2
105
3
/
16 S90
4
5
IRK.106 types
With no auxiliary cathode
6
13.8 (0.53)
4
Module type
Circuit configuration (See Circuit Configuration table)
Current code
* *
Voltage code (See Voltage Ratings table)
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
* *
Available with no auxiliary cathode.
To specify change:
e.g. : IRKT106/16 etc.
105 to 106
Maximum Allowable Case Temperature (°C)
120
110
IRK.105.. Series
R
thJC
(DC) = 0.27 K/W
Maximum Allowable Case Temperature (°C)
130
130
IRK.105.. Series
R
(DC) = 0.27 K/W
120
110
Conduction Period
thJC
Conduction Angle
100
90
80
70
0
20
40
60
80
100
120
Average On-state Current (A)
100
90
80
70
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
30°
60°
90°
120°
180°
30°
60°
90°
120°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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MEMS传感器
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