Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-220C package
·High
voltage
·Fast
switching speed
·Low
saturation voltage
·Built-in
damper diode
APPLICATIONS
·For
use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BU406D BU407D
·
Absolut maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
PARAMETER
BU406D
Collector-base voltage
BU407D
BU406D
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
Collector-emitter voltage
BU407D
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Maximum operating junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
150
6
7
10
4
60
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
330
200
V
CONDITIONS
VALUE
400
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BU406D BU407D
MIN
TYP.
MAX
UNIT
BU406D
V
CEO(SUS)
Collector-emitter
sustaining voltage
BU407D
I
C
=100mA ; I
B
=0
200
V
150
V
CEsat
Collector-emitter saturation voltage
I
C
=5A ;I
B
=0.65A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=5A ;I
B
=0.65A
1.3
V
BU406D
I
CEV
Collector
cut-off current
BU407D
V
CE
=400V; V
BE
=-1.5V
15
V
CE
=330V; V
BE
=-1.5V
mA
I
EBO
Emitter cut-off current
V
EB
=6.0V; I
C
=0
400
mA
h
FE
DC current gain
I
C
=2A ; V
CE
=5V
15
V
F
Diode forward voltage
I
F
=5A
1.5
V
f
T
Transition frequency
I
C
=0.5A ;V
CE
=10V;f=1.0MHz
I
C
=5A ;V
CC
=40V
I
B
end
=0.65A
10
MHz
t
f
Fall time
0.75
μs
2
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