BYV32EX-300P
Dual ultrafast power diode
Rev.01 13 March 2019
Product data sheet
1. General description
Ultrafast power diode in a SOT186A (TO-220F) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
Ultra low leakage current
High junction temperature up to 175 °C
Low on-state loss
Fast switching
Soft recovery characteristic minimizes power consuming oscillations
High reverse surge capability
High thermal cycling performance
Low thermal resistance
3. Applications
•
•
Home appliance power supply
Secondary rectification
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward current
δ = 0.5 ; square-wave pulse; T
h
≤ 126 °C;
per diode;
Fig. 1; Fig. 2; Fig. 3
repetitive peak forward
current
non-repetitive peak
forward current
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 126 °C;
square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
per diode
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 10 A; T
j
= 25 °C; per diode;
Fig. 6
I
F
= 10 A; T
j
= 125 °C; per diode;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/μs;
T
j
= 25 °C; per diode;
Fig. 7
-
-
25
ns
Min
-
-
Static characteristics
-
-
1.25
1
V
V
Absolute maximum rating
300
10
20
220
242
Typ
Max
V
A
A
A
A
Unit
Conditions
Values
Unit
WeEn Semiconductors
Dual ultrafast power diode
BYV32EX-300P
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
A1
K
A2
K
anode
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
A1
K
A2
sym125
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
name
BYV32EX-300P
TO-220F
Orderable part number Packing
method
BYV32EX-300PQ
Tube
Small packing Package
quantity
version
50
SOT186A
Package
issue date
14-Nov-2013
7. Marking
Table 4. Marking codes
Type number
BYV32EX-300P
Marking codes
BYV32EX-300P
BYV32EX-300P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
13 March 2019
2 / 10
WeEn Semiconductors
Dual ultrafast power diode
BYV32EX-300P
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
O(AV)
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
average output current
non-repetitive peak
forward current
DC
δ = 0.5 ; square-wave pulse; T
h
≤ 126 °C;
per doiode;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 μs; T
h
≤ 126 °C;
square-wave pulse; per diode
δ = 0.5 ; T
h
≤ 93 °C; square-wave pulse;
both diodes conducting
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave pulse;
per diode;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave pulse;
per diode
T
stg
T
j
storage temperature
junction temperature
Conditions
Values
300
300
300
10
20
20
220
242
-65 to 175
175
Unit
V
V
V
A
A
A
A
A
°C
°C
P
tot
(W)
20
agl1-001
P
tot
(W)
δ=1
12
10
2.2
8
4.0
6
4
2
0
2.8
1.9
agl1-002
a = 1.57
16
0.5
0.2
8
0.1
12
4
0
0
2
4
6
8
10
12
16
I
F(AV)
(A)
14
0
2
4
6
8
10
I
F(AV)
(A)
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 0.836 V; R
s
= 0.0168 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values; per diode
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 0.836 V; R
s
= 0.0168 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values; per diode
BYV32EX-300P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
13 March 2019
3 / 10
WeEn Semiconductors
Dual ultrafast power diode
BYV32EX-300P
I
F(peak)
(A)
160
agl1-003
I
FSM
(A)
10
4
agl1-004
120
δ = 0.1
10
3
80
δ = 0.2
10
2
I
F
I
FSM
t
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
40
δ = 0.5
δ=1
0
25
50
75
100
125
150
175
T
h
(°C)
10
10
-5
Fig. 3. Forward current as a function of heatsink
temperature; maximum values; per diode
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values;
per diode
BYV32EX-300P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
13 March 2019
4 / 10
WeEn Semiconductors
Dual ultrafast power diode
BYV32EX-300P
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-h)
Parameter
thermal resistance
from junction to
heatsink
thermal resistance
from junction to
ambient free air
Conditions
with heatsink compound; per diode;
Fig. 5
with heatsink compound; both diodes
conducting;
Fig. 5
in free air
Min
-
-
-
Typ
-
-
60
Max
4.2
3.5
-
Unit
K/W
K/W
K/W
R
th(j-a)
Z
th(j-h)
(K/W)
10
agl1-005
1
per diode
10
-1
per device
P
δ=
t
p
T
10
-2
10
-3
t
p
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
T
t
p
(s)
10
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
from cathode to external heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
PF
BYV32EX-300P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved
Product data sheet
13 March 2019
5 / 10
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