TO
-2
20F
BUJ302AX
NPN power transistor
Rev. 02 — 28 March 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a
SOT186A (TO-220F) plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Isolated package
Low thermal resistance
1.3 Applications
DC-to-DC converters
High-frequency electronic lighting
ballast applications
Inverters
Motor control systems
1.4 Quick reference data
Table 1.
Symbol
I
C
P
tot
V
CESM
Quick reference data
Parameter
collector current
total power
dissipation
collector-emitter
peak voltage
DC current gain
Conditions
see
Figure 1;
see
Figure 2;
see
Figure 4
T
h
≤
25 °C; see
Figure 3
V
BE
= 0 V
Min
-
-
-
Typ
-
-
-
Max Unit
4
26
A
W
1050 V
Static characteristics
h
FE
I
C
= 0.1 A; V
CE
= 5 V; T
h
= 25 °C;
see
Figure 11
I
C
= 0.8 A; V
CE
= 3 V; T
h
= 25 °C;
see
Figure 12
48
25
66
42
100
50
NXP Semiconductors
BUJ302AX
NPN power transistor
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
B
C
E
n.c.
base
collector
emitter
isolated
E
sym123
Simplified outline
mb
Graphic symbol
C
B
1 2 3
SOT186A (TO-220F)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUJ302AX
TO-220F
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
Type number
4. Limiting values
Table 4.
Symbol
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
V
EBO
Limiting values
Parameter
collector-emitter peak voltage
collector-emitter voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
emitter-base voltage
I
C
= 0 A; I
E
= 2 A; t
p
< 10 ms
T
h
≤
25 °C; see
Figure 3
DC
Conditions
V
BE
= 0 V
I
B
= 0 A
see
Figure 1;
see
Figure 2;
see
Figure 4
Min
-
-
-
-
-
-
-
-65
-
-
Max
1050
400
4
8
2
4
26
150
150
24
Unit
V
V
A
A
A
A
W
°C
°C
V
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUJ302AX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
2 of 13
NXP Semiconductors
BUJ302AX
NPN power transistor
10
I
C
(A)
8
003aag027
V
CC
L
C
V
CL(CE)
probe point
6
I
Bon
V
BB
L
B
DUT
001aab999
4
2
0
0
400
800
1200
V
CEclamp
(V)
Fig 1.
Reverse bias safe operating area
120
P
der
(%)
80
Fig 2.
Test circuit for reverse bias safe operating area
03aa13
40
0
0
50
100
150
T
h
(°C)
200
Fig 3.
Normalized total power dissipation as a function of heatsink temperature
BUJ302AX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
3 of 13
NXP Semiconductors
BUJ302AX
NPN power transistor
10
2
I
C
(A)
10
I
CM(max)
I
C(max)
(1)
001aac001
duty cycle = 0.01
II
(3)
t
p
= 20
μs
50
μs
100
μs
200
μs
500
μs
DC
1
(2)
10
−1
10
−2
I
(3)
III
(3)
10
−3
1
10
10
2
V
CEclamp
(V)
10
3
1)Ptot maximum and Ptot peak maximum lines
2)Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that RBE
≤
100
Ω
and tp
≤
0.6
μs
Fig 4.
Forward bias safe operating area for Tmb
≤
25 °C
BUJ302AX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
4 of 13
NXP Semiconductors
BUJ302AX
NPN power transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-h)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient
Conditions
with heatsink compound; see
Figure 5
in free air
Min
-
-
Typ
-
55
Max
4.8
-
Unit
K/W
K/W
10
Z
th(j-h)
(K/W)
1
δ
= 0.5
001aag169
0.2
0.1
0.05
0.02
P
δ
=
t
p
1/f
10
−1
10
−2
0
t
p
t
1/f
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10 10
2
t
p
(s)
Fig 5.
Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
V
isol(RMS)
Isolation characteristics
Parameter
RMS isolation voltage
Conditions
50 Hz
≤
f
≤
60 Hz; RH
≤
65 %; T
h
= 25 °C;
from all terminals to external heatsink; clean
and dust free
from collector to external heatsink ; f = 1 MHz;
T
h
= 25 °C
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
pF
BUJ302AX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 28 March 2011
5 of 13
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