3.6 V, 450 mW DECT RF Power
Amplifier IC
V 1.0
MA02203AD
Features
§
Ideal for DECT Applications
§
+26.5 dBm Output Power
§
24.5 dB Power Gain
§
Single Positive Supply
§
Class A Bias
§
No External RF Matching Required
Functional Schematic
N/C
+V
DD1
GND
GND
RF
IN
GND
GND
N/C
+V
DD2
GND
GND
RF
OUT
GND
GND
N/C
16 pin narrow body SOIC
Description
The MA02203AD is a two stage power amplifier
designed for DECT applications to have an output
power of +26.5 dBm with an input power of 2 dBm.
This power amplifier operates at +3.6 volts with
35% typical power added efficiency.
The
MA02203AD is mounted in a narrow body 16-pin
SOIC plastic package.
The MA02203AD is fabricated using M/A-COM’s
self-aligned MSAG
®
-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.
This part is
not
recommended for new designs. M/A-
COM’s MA02206GJ has superior RF performance
with less DC power consumption in a smaller
package. Pricing on the MA02206GJ is also less
than the MA02203AD.
N/C
Pin Configuration
Pin
1
2
3
4
5
6
7
8
9
10
11
12
Function
N/C
V
DD1
GND
GND
RF
IN
GND
GND
N/C
N/C
GND
GND
RF
OUT
GND
GND
V
DD2
N/C
Description
Not Connected
First Stage Supply Voltage
Ground
Ground
RF Input
Ground
Ground
Not Connected
Not Connected
Ground
Ground
RF Output
Ground
Ground
Second Stage Supply Voltage
Not Connected
Ordering Information
Part Number
MA02203AD-R7
MA02203AD-R13
Description
7 inch, 1000 piece reel
13 inch, 3000 piece reel
13
14
15
16
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
1
Part Description DECT RF Power Amplifier IC
3.6 V, 450 mW
Electrical Specifications: T
S
= 40 °C
1
, Z
0
= 50
Ω
2,3
Parameter
Frequency
Output Power
Pout Frequency Dependency
Power Gain
Current Consumption
Input VSWR, PA On
Input VSWR, PA Off
Isolation, PA Off
2
nd
rd
MA02203AD
V 1.0
Test Conditions
Units
MHz
dBm
dB
dB
mA
-
Min
1880
25.5
Typ
Max
1900
26.5
0.2
24.5
350
1.6:1
1.4:1
27.5
0.5
420
2.0:1
2.0:1
V
DD1
, V
DD2
= 0 V
V
DD1
, V
DD2
= 0 V
-
dB
dBc
dBc
40
Harmonics
Junction of 2nd stage FET to pin 11, Duty
Cycle=50%
V
DD
= 4.6 V, VSWR = 10:1, P
IN
= 7 dBm
P
IN
= -3 to +7 dBm, V
DD
= 0 - 4.6 V, 0 mW
< P
OUT
< 450 mW, T
S
= -40 to +75
°C,
Load
VSWR = 10:1
31
55
63
No degradation
All spurs < -60 dBc
3 Harmonics
Thermal Resistance
Load Mismatch
Stability
o
C/W
-
-
1. Ts is the temperature measured at the soldering point of pin 11.
2. Unless otherwise specified, input power is +2 dBm, V
DD
is +3.6 V, and test frequency is 1890 MHz.
Absolute Maximum Ratings
1
Parameter
Max Input Power
Operating Voltages
Operating Temperature, Ts
Channel Temperature
Storage Temperature
Absolute Maximum
+6 dBm
+5.5 volts
-40 °C to +75 °C
+150 °C
-40 °C to +150 °C
1. Exceeding any one or combination of these limits may cause permanent damage.
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
2
Part Description DECT RF Power Amplifier IC
3.6 V, 450 mW
Application Information
MA02203AD
V 1.0
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.
Board Layout
Sample Test Board
50 Ohm Lead Transition
Typical Performance Curves
Output Power and Current vs. Input Power
30
0.6
Output Power, PAE, and VSWR vs. Frequency
45
40
η
4:1
25
P
OUT
, Output Power (dBm)
P
OUT
I
DD
, Drain Current (A)
P
OUT
(dBm) and
η
(%)
35
20
I
DD
0.4
30
25
20
15
10
5
0
VSWR
P
OUT
3:1
Input VSWR
2:1
1:1
2
15
P
IN
= +2 dBm
V
DD
= 3.6 V
10
f
= 1.89 GHz
V
DD
= 3.6 V
0.2
5
0
-10
-5
0
P
IN
, Input Power (dBm)
5
0.0
1.7
1.8
1.9
ƒ
, Frequency (GHz)
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
3
Part Description DECT RF Power Amplifier IC
3.6 V, 450 mW
Output Power and Current vs. Supply Voltage
30
25
P
OUT
, Output Power (dBm)
20
I
DD
15
10
ƒ
=1.89 GHz
P
IN
= +2 dBm
0.3
0.2
0.6
0.5
P
OUT
, Output Power (dBm)
I
DD
, Drain Current (A)
0.4
MA02203AD
V 1.0
Harmonics
30
20
10
0
-10
-20
-30
-40
ƒο
2ƒο
3ƒο
Frequency
4ƒο
5ƒο
ƒ
o
= 1.89 GHz
P
IN
= +2 dBm
V
DD
= 3.6 V
P
OUT
5
0
2.8
3.0
3.2
0.1
0
3.4
3.6 3.8
4.0
V
DD
, Supply Voltage (V)
4.2
4.4
4.6
Output Power and Current vs. Frequency, Ts = -40
o
C
30
0.6
Output Power and Current vs. Frequency, Ts = +75
o
C
30
0.6
25
P
OUT
, Ouput Power (dBm)
P
OUT
0.5
P
OUT
, Ouput Power (dBm)
I
DD
, Drain Current (A)
25
P
OUT
0.5
I
DD
, Drain Current (A)
20
I
DD
0.4
20
I
DD
0.4
15
0.3
15
0.3
10
P
IN
= +2 dBm
V
DD
= 3.6 V
0.2
10
P
IN
= +2 dBm
V
DD
= 3.6 V
0.2
5
0.1
T
s
= -40 °C
0
1.7
5
T
s
= +75 °C
1.7
0.1
0
1.8
1.9
ƒ
, Frequency (GHz)
2
0
1.8
1.9
ƒ
, Frequency (GHz)
2
0
Output Power and Current vs. Temperature
30
0.6
Power Dissipation vs. Temperature
3.0
25
P
OUT
, Output Power (dBm)
20
I
DD
0.4
P
DISS
, Dissipated Power (W)
P
OUT
0.5
I
DD
, Drain Current (A)
2.5
2.0
Slope = -1 / R
TH J-S
15
0.3
1.5
10
P
IN
= +2 dBm
V
DD
= 3.6 V
0.2
1.0
5
0.1
0.5
0.0
0
25
50
75
100
125
150
T
S
, Temperature at Solder Point of Pin 11 (°C)
175
0
-50
-25
0
25
50
T
S
, Operating Temperature (°C)
75
0.0
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
Part Description DECT RF Power Amplifier IC
3.6 V, 450 mW
Application Schematic
+V
DD
C1
C2
MA02203AD
V 1.0
L1
L2
N/C
1
16
N/C
2
15
3
14
4
13
RF
INPUT
5
12
RF
OUTPUT
6
11
7
10
N/C
8
9
N/C
60mil GETEK Board
List of components:
C1 = C2 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL)
L1 = 8.2 nH Coilcraft chip inductor (1008CT.080XKBB)
L2 = 27 nH Coilcraft chip inductor (1008CS.270XKBB)
SOIC-16 Narrow Body Package
Symbol
A
A1
A2
B
C
D
E
e
H
L
y
θ
Dimensions in
millimeters
Min
Nom
Max
1.35
1.60
1.75
0.10
0.25
1.45
0.33
0.41
0.51
0.19
0.20
0.25
9.80
9.91
10.01
3.80
3.91
4.00
1.27
5.79
5.99
6.20
0.38
0.71
1.27
0.10
0°
8°
Dimensions in inches
Min
0.053
0.004
0.013
0.0075
0.386
0.150
0.228
0.015
0°
Nom
0.063
0.057
0.016
0.008
0.390
0.154
0.050
0.236
0.028
Max
0.068
0.010
0.020
0.0098
0.394
0.157
0.244
0.050
0.004
8°
NOTES:
1.
2.
3.
4.
5.
6.
Controlling dimension: inch
Lead frame material: copper alloy C151
Lead thickness after solder plating will be 0.013" maximum
Dimension “D” does not include mold flash, protrusions or gate
burrs
Dimension “E” does not include interlead flash or protrusions
Tolerance: ±0.010" unless otherwise specified
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
5
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