MA08509D
10W Power Amplifier Die
(8.0-11 GHz)
FEATURES
•
•
•
Broadband Performance
32% Typical Power Added Efficiency
50
Ω
Input/Output Impedance
Preliminary Release
V
DD
V
DD
•
Self-Aligned MSAG
®
MESFET Process
RF
IN
RF
OUT
V
GG
Description
The MA08509D is a three stage MMIC power
amplifier fabricated using M/A-COM’s mature
GaAs Self-Aligned MSAG
®
MESFET Process.
This product is fully matched to 50 ohms on
both the input and the output.
Maximum Ratings
(T
Rating
A
= 25 °C unless otherwise noted)
Symbol
Value
DC Drain Supply Voltage
DC Gate Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
V
DD
V
GG
P
IN
T
J
T
STG
12
-6
500
150
-40 to
+85
Unit
Vdc
Vdc
mW
°C
°C
ELECTRICAL CHARACTERISTICS
V
DD
= 10.0 V, V
GG
= -4 V, P
IN
= 18 dBm, T
A
= 25 °C
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency
Output Power, saturated
Power Gain, saturated
Gain Flatness Over Frequency @ P
in
= 18 dBm
ƒ
P
SAT
G
SAT
-
PAE
S
11
2ƒ
ο
, 3ƒ
ο
R
th
8.0
39.0
20
25
Power Added Efficiency
(P
OUT
=P
SAT
)
Return Loss
Harmonics
Output Stage Thermal Resistance @ Pin = 18 dBm
-
40
22
+/- 1.0
32
-6
-30
5.4
11.0
41.5
-4
GHz
dBm
dB
dB
%
dB
dBc
°C/W
Specifications subject to change without notice.
902179 D
North America:
Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific:
Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
10W Power Amplifier Die (8-11 GHz)
TYPICAL CHARACTERISTICS
(
V
DD
= 10 V, V
GG
= -4 V, P
IN
= 18 dBm
)
42
MA08509D
32
28
24
40
38
Pout (dBm)
20
36
Gain (dB)
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
16
12
8
34
32
4
30
0
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25 10.5 10.75
11
Frequency (G
Hz)
Frequency (GHz)
Figure 1. Output Power vs. Frequency
45
40
35
30
PAE (%)
25
20
15
10
-20
5
0
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
-5
0
Figure 2. Gain vs. Frequency
Return Loss(dB)
-10
-15
-25
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
Frequency (GHz)
Frequency (GHz)
Figure 3. Power Added Efficiency vs. Frequency
Figure 4. Input Return Loss vs. Frequency
Specifications subject to change without notice.
902179 D
North America:
Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific:
Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
10W Power Amplifier Die (8-11 GHz)
APPLICATION INFORMATION
5000 pF
MA08509D
Assembly:
Chip dimensions:
4.6 mm x 4.6 mm, .003”
thickness.
Die attach:
Use AuSn (80/20) 1-2 mil.
preform solder. Limit time @ 300
°C
to less
than 5 minutes.
Wirebonding:
Bond @ 160
°C
using
standard ball or thermal compression wedge
bond techniques. For DC pad connections,
use either ball or wedge bonds. For best RF
performance, use wedge bonds of shortest
length, although ball bonds are also
acceptable.
V
GG
5000 pF
0.1
µ
F
V
DD
V
DD
5000 pF
0.1
µ
F
100 pF
RF IN
0.1
µ
F
50
Ω
50
Ω
RF OUT
100 pF
V
GG
5000 pF
0.1
µ
F
5000 pF
0.1
µ
F
Biasing:
V
DD
V
DD
1. User must apply negative bias to V
GG
before
applying positive bias to V
DD
to prevent
damage to amplifier.
Figure 5. Recommended bonding diagram
for pedestal
mount. Support circuitry typical of MMIC characterization
fixture for CW testing
Specifications subject to change without notice.
902179 D
North America:
Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific:
Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
5000 pF
0.1
µ
F
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