PD 9.1696A
PRELIMINARY
l
l
l
l
l
IRL3302
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Optimized for 4.5V Gate Drive
Ideal for CPU Core DC-DC Converters
150°C Operating Temperature
Fast Switching
V
DSS
= 20V
G
S
R
DS(on)
= 0.020W
I
D
= 39A
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
39
25
160
57
0.45
± 10
14
130
23
5.7
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
qJC
R
qCS
R
qJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
°C/W
11/18/97
IRL3302
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
DV
(BR)DSS
/DT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
0.70
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.023
V
GS
= 4.5V, I
D
= 23A
W
0.020
V
GS
= 7.0V, I
D
= 23A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 23A
25
V
DS
= 20V, V
GS
= 0V
µA
250
V
DS
= 10V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 10V
nA
-100
V
GS
= -10V
31
I
D
= 23A
5.7
nC V
DS
= 16V
13
V
GS
= 4.5V, See Fig. 6
–––
V
DD
= 10V
–––
I
D
= 23A
ns
–––
R
G
= 9.5W V
GS
= 4.5V
,
–––
R
D
= 2.4W
,
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
G
from package
––– 7.5 –––
and center of die contact
––– 1300 –––
V
GS
= 0V
––– 520 –––
pF
V
DS
= 15V
––– 190 –––
ƒ = 1.0MHz, See Fig. 5
Typ.
–––
0.022
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.2
110
41
89
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
39
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 23A, V
GS
= 0V
––– 62
94
ns
T
J
= 25°C, I
F
= 23A
––– 110 160
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I £
23A, di/dt
£
97A/µs, V
DD
£
V
(BR)DSS
,
SD
T
J
£
150°C
Starting T
J
= 25°C, L = 0.49mH
R
G
= 25W , I
AS
= 23A.
Pulse width
£
300µs; duty cycle
£
2%.
IRL3302
1000
TOP
TOP
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
BOTTOM
3.0V
2.5V
BOTTOM 2.5V
1000
TOP
TOP
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
6.0V
4.0V
4.0V
3.0V
BOTTOM
3.0V
2.5V
BOTTOM 2.5V
100
2.5V
10
0.1
2.5V
20µs PULSE WIDTH
T
J
= 25
°
C
10
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 39A
I
D
, Drain-to-Source Current (A)
1.5
100
1.0
10
0.5
1
2
3
4
5
V DS = 15V
20µs PULSE WIDTH
6
7
8
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL3302
2400
2000
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
15
I
D
=
23A
V
DS
= 16V
12
C, Capacitance (pF)
1600
C
iss
1200
9
6
800
C
oss
400
3
C
rss
0
1
10
100
0
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
T
J
= 150
°
C
I
D
, Drain Current (A)
10us
100
100us
10
10
1ms
T
J
= 25
°
C
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
1
0.5
V
GS
= 0 V
1.0
1.5
2.0
1
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRL3302
40
300
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
250
I
D
, Drain Current (A)
30
BOTTOM
ID
10A
15A
23A
200
20
150
100
10
50
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Starting T
J
, Junction Temperature(
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
