DSB 1 I 60 SA
advanced
Schottky
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
Part number
(Marking on product)
V
RRM
=
I
FAV
=
V
F
=
60 V
1A
0.50 V
DSB 1 I 60 SA
(S1HB)
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
Low Irm-values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
●
Low losses
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
●
Decoupling diode
Package:
SMA (DO-214AC)
●
Industry standard outline
●
Epoxy meets UL 94V-0
●
RoHS compliant
Ratings
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
T
VJ
= 25 °C
V
R
= 60 V
V
R
= 60 V
I
F
=
I
F
=
I
F
=
I
F
=
1A
2A
1A
2A
T
VJ
= 25 °C
T
VJ
= 125 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
L
= 125 °C
T
L
= 150 °C
min.
typ.
max.
60
0.1
15
0.58
0.72
0.50
0.64
1
Unit
V
mA
mA
V
V
V
V
A
V
m
Ω
forward voltage
I
FAV
V
F0
r
F
R
thJL
T
VJ
P
tot
I
FSM
C
J
E
AS
I
AR
average forward current
threshold voltage
slope resistance
rectangular, d = 0.5
for power loss calculation only
thermal resistance junction to lead*
virtual junction temperature
total power dissipation
max. forward surge current
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
40
-55
T
L
= 25 °C
t
p
= 10 ms (50 Hz), sine
V
R
=
I
AS
=
5 V; f = 1 MHz
A;
L = 100 µH
T
VJ
= 45 °C
T
VJ
=
25 °C
T
VJ
= 25 °C
150
3
45
65
tbd
tbd
K/W
°C
W
A
pF
mJ
A
V
A
= 1.5·V
R
typ.; f = 10 kHz
* mounted on 1 inch square PCB
0615
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747 and per diode unless otherwise specified
© 2006 IXYS all rights reserved
DSB 1 I 60 SA
advanced
Ratings
Symbol
I
RMS
R
thJA
M
D
F
C
T
stg
Weight
Definition
RMS current
thermal resistance junction to ambient
mounting torque
mounting force with clip
storage temperature
Conditions
per pin*
min.
typ.
max.
Unit
A
80
K/W
Nm
N
-55
0.07
150
°C
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines SMA (DO-214AC)
E
H
Dim.
A
B
Millimeters
min
3.99
2.54
1.25
1.98
4.93
0.76
0.15
2.00
max
4.50
2.79
1.65
2.29
5.28
1.52
0.31
2.20
min
Inches
max
0.177
0.110
0.065
0.090
0.208
0.060
0.012
0.087
0.157
0.100
0.049
0.078
0.194
0.030
0.006
0.079
D
C
D
E
F
G
F
G
H
B
A
C
0615
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747 and per diode unless otherwise specified
© 2006 IXYS all rights reserved
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