Switching Diodes
MA2B190
Silicon epitaxial planar type
φ
0.56 max.
Unit : mm
For switching circuits
1
I
Features
•
Low forward dynamic resistance r
f
•
Small terminal capacitance, C
t
I
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
Repetitive peak forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Note) * : t = 1 s
Symbol
V
R
V
RRM
I
F(AV)
I
FRM
I
FSM
T
j
T
stg
Rating
35
35
100
225
500
200
−55
to
+200
Unit
V
V
mA
mA
mA
°C
°C
1st Band
2nd Band
2
φ
1.95 max.
1: Cathode
2: Anode
JEDEC: DO-35
I
Electrical Characteristics
T
a
= 25°C
Parameter
Reverse current (DC)
Symbol
I
R1
I
R2
I
R3
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Forward dynamic resistance
Reverse recovery time
*3
V
F
V
R
C
t
r
f* 1
r
f
*2
Conditions
V
R
= 15 V
V
R
= 30 V
V
R
= 35 V, T
a
= 150°C
I
F
= 100 mA
I
R
= 100
µA
V
R
= 0 V, f = 1 MHz
I
F
= 3 mA, f = 30 MH
Z
I
F
= 3 mA, f = 30 MH
Z
I
F
= 10 mA, V
R
= 1 V
I
rr
= 0.1 · I
R
, R
L
= 100
Ω
Min
Typ
Max
0.005
0.01
100
1.2
24 min.
4.5 max.
24 min.
COLORED BAND
INDICATES
CATHODE
Unit
µA
µA
µA
V
V
35
4
2.5
3.6
0.2
pF
Ω
Ω
ms
t
rr
Note) 1. Rated input/output frequency: 2.5 MHz
2. *1 : r
f
measuring instrument: Nihon Koshuha Model TDC-121A
*2 : r
f
measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
*3 : t
rr
measuring circuit
Bias Application Unit N-50BU
Input Pulse
t
r
10%
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
1 V
R
L
=
100
Ω
Output Pulse
I
Cathode Indication
Type No.
Color
1st Band
2nd Band
MA2B190
White
White
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
1