Schottky Barrier Diodes (SBD)
MA2C700, MA2C700A
(MA700, MA700A)
Silicon epitaxial planar type
Unit: mm
For wave detection
For super high speed switching
I
Features
•
Low forward voltage V
F
and good wave detection efficiency
η
•
Small temperature coefficient of forward characteristic
•
Small reverse current I
R
•
High-density mounting (5 mm pitch insertion) is possible
•
DO-34-A1(DHD) package
0.2 max.
φ
1.6
±0.2
Anode
2nd Band
1st Band
Cathode
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC) MA2C700
MA2C700A
Peak reverse voltage MA2C700
MA2C700A
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
I
FM
I
F
T
j
T
stg
V
RM
Symbol
V
R
Rating
15
30
15
30
150
30
125
−55
to
+125
mA
mA
°C
°C
V
Unit
V
1 : Cathode
2 : Anode
DO-34-A1
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC) MA2C700
MA2C700A
Forward voltage (DC)
V
F1
V
F2
Terminal capacitance
Reverse recovery time
Detection efficiency
*
Symbol
I
R
V
R
=
15 V
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
Conditions
Min
Typ
Max
100
150
0.4
1
φ
0.40
±0.05
13.0 min.
2.3
±0.3
2.2
±0.3
13.0 min.
Unit
nA
V
C
t
t
rr
η
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
Ω
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
1.3
1
60
pF
ns
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Ω
Output Pulse
I
Cathode Mark
Type No.
Color
1st Band
2nd Band
MA2C700 MA2C700A
Silver
Silver
Green
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00001AED
Publication date: August 2001
1
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and semiconductors described in this material
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•
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2001 MAR
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