Variable Capacitance Diodes
MA2J372
Silicon epitaxial planar type
Unit : mm
For UHF and VHF electronic tuners
I
Features
•
Large capacitance ratio
•
Small series resistance r
D
•
S-mini type package, allowing downsizing of equipment and
automatic insertion through the taping package (Flat type)
INDICATES
CATHODE
0.4
±
0.15
1
2
0.4
±
0.15
1.7
±
0.1
2.5
±
0.2
Parameter
Reverse voltage (DC)
Peak reverse voltage
*
Forward current (DC)
Junction temperature
Storage temperature
Note) * : R
L
= 2.2 kΩ
Symbol
V
R
V
RM
I
F
T
j
T
stg
Rating
32
34
20
150
−55
to
+150
Unit
V
V
mA
°C
°C
0.9
±
0.1
1 : Anode
2 : Cathode
S-Mini Type Package (Flat 2-pin)
Marking Symbol: 6N
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Diode capacitance
Symbol
I
R
C
D(2V)
C
D(25V)
C
D(10V)
C
D(17V)
Capacitance ratio
C
D(2V)
/C
D(25V)
C
D(10V)
/C
D(17V)
Diode capacitance deviation
Series resistance
*
∆C
r
D
C
D(2V)(10V)(17V)(25V)
C
D
= 9 pF, f = 470 MHz
V
R
= 30 V
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 10 V, f = 1 MHz
V
R
= 17 V, f = 1 MHz
14.220
2.132
5.307
2.909
6.22
1.70
1.96
2
0.45
Conditions
Min
Typ
Max
10
15.473
2.321
6.128
3.411
Unit
nA
pF
pF
pF
pF
%
Ω
Note) 1．
Rated input/output frequency: 470 MHz
2． : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
*
0.16
−
0.06
+
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
0.45
−
0.05
+
0.1
1.25
±
0.1
1
MA2J372
C
D
V
R
100
f
=
1 MHz
T
a
=
25°C
120
Variable Capacitance Diodes
I
F
V
F
1.03
C
D
T
a
50
100
1.02
Diode capacitance C
D
(pF)
V
R
=
2 V
10 V
17 V
25 V
30
20
Forward current I
F
(mA)
10
60
25°C
−
40°C
C
D
(T
a
)
C
D
(T
a
=
25°C)
80
T
a
=
60°C
1.01
1.00
5
3
2
40
0.99
20
0.98
1
0
0
4
8 12 16 20 24 28 32 36 40
0
0.2
0.4
0.6
0.8
1.0
1.2
0.97
0
20
40
60
80
100
Reverse voltage V
R
(V)
Forward voltage V
F
(V)
Ambient temperature T
a
(
°C
)
100
I
R
T
a
Reverse current I
R
(nA)
10
1
0.1
0.01
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature T
a
(
°C
)
2
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