Switching Diodes
MA2J112
Silicon epitaxial planar type
Unit : mm
For switching circuits
K
A
0.625
•
Small S-mini type package, allowing high-density mounting
•
Ensuring the average forward current capacity I
F(AV)
= 200 mA
2
1
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current
*1
Peak forward current
Non-repetitive peak forward
surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Rating
40
40
200
600
1
150
−55
to
+150
Unit
V
V
mA
mA
A
°C
°C
0.4
±
0.1
1.7
±
0.1
2.5
±
0.2
0.4
±
0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 1C
Note) *1 : With a printed-circuit board
*2 : t = 1 s
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Symbol
I
R1
I
R2
I
R3
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
V
F
C
t
t
rr
V
R
=
15 V
V
R
=
35 V
V
R
=
35 V, T
a
=
100°C
I
F
=
200 mA
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 · I
R
, R
L
=
100
Ω
Conditions
Min
Typ
Max
50
500
100
1.1
4
10
Unit
nA
nA
µA
V
pF
ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : t
rr
measuring circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.7
±
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
0.16
−
0.06
+
0.1
1.25
±
0.1
0.5
±
0.1
I
Features
0.3
1
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