Schottky Barrier Diodes (SBD)
MA2Q737
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.4
±
0.3
0 to 0.05
•
Forward current (average) I
F(AV)
: 1.5 A type
•
Reverse voltage (DC value) V
R
: 30 V
•
Allowing automatic insertion with the emboss taping
2.5
±
0.3
I
Features
2
1
0.25
−
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
*1
Non-repetitive peak forward
surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
30
30
1.5
60
−40
to
+125
−40
to
+125
Unit
V
1.2
±
0.4
5.0
+
0.4
−
0.1
1.2
±
0.4
V
A
A
°C
°C
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PC
Note) *1 : With a printed-circuit board (copper foil area 2.5 mm
×
2.5 mm
+ 0.8 mm
×
20 mm or more on both cathode and anode sides)
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 30 V
I
F
= 2 A
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
70
50
Conditions
Min
Typ
Max
1
0.5
Unit
mA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 20 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
2.15
±
0.3
+
0.1
1.4
±
0.2
1
MA2Q737
I
F(AV)
T
a
(1) Printed-circuit board: Glass epoxy board
(2) Printed-circuit board: Alumina board
Copper foil for both A and K sides
2.5 mm
×
2.5 mm + 0.8 mm
×
20 mm
10
4
Schottky Barrier Diodes (SBD)
I
F
V
F
10
5
75°C 25°C
I
R
V
R
A
K
2.5
10
3
10
4
Average forward current I
F(AV)
(A)
0.8
2.0
Forward current I
F
(mA)
1.5
(1)
10
2
Reverse current I
R
(
µA
)
(2)
20 2.5
T
C
=
125°C
−
20°C
T
a
=
125°C
10
3
75°C
10
2
1.0
10
0.5
1
10
25°C
0
10
−1
0
50
100
150
0
0.1
0.2
0.3
0.4
0.5
0.6
1
0
10
20
30
40
50
60
Ambient temperature T
a
(
°C
)
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
V
F
T
a
0.8
0.7
I
R
T
a
10
4
V
R
=
30 V
C
t
V
R
600
10 V
5V
0.6
0.5
0.4
0.3
0.2
0.1
10 mA
0
−40
0
40
80
120
160
200
I
F
=
2 A
Terminal capacitance C
t
(pF)
10
3
500
Forward voltage V
F
(V)
Reverse current I
R
(
µA
)
400
10
2
300
10
200
100 mA
1
100
10
−1
−40
0
0
40
80
120
160
200
0
10
20
30
40
50
60
Ambient temperature T
a
(
°C
)
Ambient temperature T
a
(
°C
)
Reverse voltage V
R
(V)
2
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