Schottky Barrier Diodes (SBD)
MA2Z720
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.625
•
Sealed in S-mini type 2-pin package
•
Allowing to rectify under (I
F(AV)
= 500 mA) condition
•
Allowing high-density mounting
2
0.16
−
0.06
+
0.1
1
1.25
±
0.1
0.5
±
0.1
I
Features
0.3
I
Absolute Maximum Ratings
Ta
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
Symbol
V
R
V
RM
I
F(AV)
I
FSM
T
j
T
stg
Rating
40
40
500
2
125
−55
to
+150
Unit
V
V
mA
A
°C
°C
0.4
±
0.1
1.7
±
0.1
2.5
±
0.2
0.4
±
0.1
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2L
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
Conditions
V
R
= 35 V
I
F
= 500 mA
V
R
= 0 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 0.1 I
R
, R
L
= 100
Ω
60
5
Min
Typ
Max
100
0.55
Unit
µA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and leakage of current from the equipment used.
2. Rated input/output frequency: 400 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
Input Pulse
t
p
10%
t
I
F
Output Pulse
t
rr
t
I
rr
=
0.1 · I
R
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.7
±
0.1
1
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
