Fast Recovery Diodes (FRD)
MA3D694
Silicon planar type
Unit : mm
For high-frequency rectification
15.0
±
0.5
9.9
±
0.3
4.6
±
0.2
I
Features
•
Low forward rise voltage V
F
•
Fast reverse recovery time t
rr
•
TO-220D (Full-pack package) with high dielectric breakdown
voltage
>
5.0 kV
•
Easy-to-mount, caused by its V cut lead end
φ
3.2
±
0.1
13.7
±
0.2
4.2
±
0.2
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
2.54
±
0.3
3 5.08
±
0.5
3.0
±
0.5
2.9
±
0.2
2.6
±
0.1
0.55
±
0.15
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Average forward current
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
T
j
T
stg
−40
to
+150
−40
to
+150
°C
°C
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
Rating
400
400
10
60
Unit
V
V
A
A
1
2
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Internal Connection
1
2
3
Note) * : Half sine-wave; 10 ms/cycle
I
Electrical Characteristics
T
a
=
25°C
Parameter
Repetitive peak reverse current
Symbol
I
RRM1
I
RRM2
Forward voltage (DC)
Reverse recovery time
*
Thermal resistance
V
F
t
rr
R
th(j-c)
R
th(j-a)
Note) 1. Rated input/output frequency: 10 MHz
2. * : t
rr
measuring circuit
Conditions
V
RRM
= 400 V, T
C
= 25°C
V
RRM
= 400 V, T
j
= 150°C
I
F
= 5 A, T
C
= 25°C
I
F
= 1 A, I
R
= 1 A
Direct current (between junction and case)
Min
Typ
Max
50
6
1
100
3
62.5
Unit
µA
mA
V
ns
°C/W
°C/W
50
Ω
50
Ω
t
rr
I
F
D.U.T
5.5
Ω
I
R
0.1
×
I
R
1
MA3D694
I
F
V
F
100
1.6
1.4
Fast Recovery Diodes (FRD)
V
F
T
a
1 000
T
a
=
150°C
I
R
V
R
10
100°C 25°C
100
Forward voltage V
F
(V)
Forward current I
F
(A)
T
a
=
150°C
1
−20°C
1.2
I
F
=
10 A
1.0
5A
0.8
1A
0.6
0.4
0.2
Reverse current I
R
(
µA
)
100°C
10
0.1
0
25°C
0.01
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
−40
0.01
0
40
80
120
160
200
0
100
200
300
400
500
600
Forward voltage V
F
(V)
Ambient temperature T
a
(
°C
)
Reverse voltage V
R
(V)
I
R
T
a
1 000
V
R
=
400 V
100
100 V
10 V
10
300
C
t
V
R
15
P
D(AV)
I
F(AV)
Average forward power P
D(AV)
(W)
f
=
1 MHz
T
a
=
25°C
t
0
/ t
1
=
1/6
t
0
t
1
Terminal capacitance C
t
(pF)
Reverse current I
R
(
µA
)
1/3
1/2
DC
200
10
1
100
5
0.1
0.01
−40
0
0
40
80
120
160
200
0
100
200
300
400
500
600
0
0
2
4
6
8
10
12
Ambient temperature T
a
(
°C
)
Reverse voltage V
R
(V)
Average forward current I
F(AV)
(A)
I
F(AV)
T
C
16
Average forward current I
F(AV)
(A)
14
12
10
8
6
4
2
0
40
t
0
/ t
1
=
1/2
1/3
1/6
DC
t
0
t
1
60
80
100
120
140
160
Case temperature T
C
(
°C
)
2
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