Fast Recovery Diodes (FRD)
MA3U649
Silicon planar type (cathode common)
Unit : mm
For high-frequency rectification
I
Features
•
Small U-type package for surface mounting
•
Low-loss type with fast reverse recovery time t
rr
•
Cathode common dual type
6.5
±
0.1
5.3
±
0.1
4.35
±
0.1
2.3
±
0.1
0.5
±
0.1
7.3
±
0.1
1.8
±
0.1
2.5
±
0.1
0.8 max.
0.93
±
0.1
1.0
±
0.1
0.1
±
0.05
0.5
±
0.1
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse
surge voltage
Average forward current
*1
Non-repetitive peak forward
surge current
*2
Junction temperature
Storage temperature
I
F(AV)
I
FSM
T
j
T
stg
5
40
−40
to
+150
−40
to
+150
A
A
°C
°C
Symbol
V
RRM
V
RSM
Rating
200
200
Unit
V
V
1
0.75
±
0.1
2.3
±
0.1
4.6
±
0.1
2
3
1 : Anode
2 : Cathode
(Common)
3 : Anode
U-Type Package
Note) 1. *1 : T
C
= 25°C
*2 : Half sine-wave; 10 ms/cycle
I
Electrical Characteristics
T
a
=
25°C
Parameter
Repetitive peak reverse current
Symbol
I
RRM1
I
RRM2
Forward voltage (DC)
Reverse recovery time
*2
Thermal resistance
*1
Conditions
V
RRM
= 200 V, T
C
= 25°C
V
RRM
= 200 V, T
j
= 150°C
I
F
= 2.5 A, T
C
= 25°C
I
F
= 1 A, I
R
= 1 A
Direct current (between junction and case)
Min
Typ
Max
20
2
0.98
30
12.5
Unit
µA
mA
V
ns
°C/W
V
F
t
rr
R
th(j-c)
Note) 1. Rated input/output frequency: 200 MHz
2. *1 : T
C
= 25°C
*2 : t
rr
measuring circuit
50
Ω
50
Ω
t
rr
I
F
D.U.T
5.5
Ω
I
R
0.1
×
I
R
1.0
±
0.2
1
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