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MA3X715

产品描述Silicon epitaxial planar type
产品类别分立半导体    二极管   
文件大小47KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
标准
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MA3X715概述

Silicon epitaxial planar type

MA3X715规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Panasonic(松下)
零件包装代码SC-59
包装说明R-PDSO-G3
针数3
Reach Compliance Codeunknow
ECCN代码EAR99
配置SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料SILICON
二极管类型MIXER DIODE
频带L BAND
JESD-30 代码R-PDSO-G3
JESD-609代码e6
湿度敏感等级1
元件数量2
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
表面贴装YES
技术SCHOTTKY
端子面层Tin/Bismuth (Sn/Bi)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间10

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Schottky Barrier Diodes (SBD)
MA3X715
(MA715)
Silicon epitaxial planar type
Unit: mm
For high frequency rectification
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
s
Features
Low forward voltage V
F
Optimum for high frequency rectification because of its short
reverse recovery time (t
rr
)
Mini type 3-pin package
2.8
+0.2
–0.3
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
s
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC)
Single
Series
Peak forward
current
Single
Series
T
j
T
stg
I
FM
Symbol
V
R
V
RM
I
F
Rating
30
30
30
20
150
110
125
−55
to
+125
°C
°C
mA
Unit
V
V
mA
10˚
1.1
+0.2
–0.1
(0.65)
1.1
+0.3
–0.1
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: M2Y
Internal Connection
3
Junction temperature
Storage temperature
1
0 to 0.1
2
s
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Symbol
I
R
V
F1
V
F2
Terminal capacitance
Reverse recovery time
*
Detection efficiency
C
t
t
rr
η
V
R
=
30 V
I
F
=
1 mA
I
F
=
30 mA
V
R
=
1 V, f
=
1 MHz
I
F
=
I
R
=
10 mA
I
rr
=
1 mA, R
L
=
100
V
in
=
3 V
(peak)
, f
=
30 MHz
R
L
=
3.9 kΩ, C
L
=
10 pF
1.5
1.0
65
Conditions
Min
Typ
Max
30
0.3
1.0
pF
ns
%
Unit
µA
V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
Bias Application Unit N-50BU
t
r
10%
3. *: t
rr
measuring instrument
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
1 mA
I
F
=
10 mA
I
R
=
10 mA
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
SKH00075BED
0.4
±0.2
Publication date: January 2002
1

MA3X715相似产品对比

MA3X715 MA715
描述 Silicon epitaxial planar type Silicon epitaxial planar type
是否Rohs认证 符合 符合
零件包装代码 SC-59 SC-59
包装说明 R-PDSO-G3 R-PDSO-G3
针数 3 3
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
配置 SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 MIXER DIODE MIXER DIODE
频带 L BAND L BAND
JESD-30 代码 R-PDSO-G3 R-PDSO-G3
JESD-609代码 e6 e6
湿度敏感等级 1 1
元件数量 2 2
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
技术 SCHOTTKY SCHOTTKY
端子面层 Tin/Bismuth (Sn/Bi) Tin/Bismuth (Sn/Bi)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 10 10

 
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