Schottky Barrier Diodes (SBD)
MA3XD15
Silicon epitaxial planar type
Unit : mm
For rectification
For protection against reverse current
2.9
−
0.05
2.8
−
0.3
0.65
±
0.15
1.5
−
0.05
+
0.25
+
0.2
0.65
±
0.15
0.95
•
Mini type 3-pin package
•
Low V
F
or Low I
R
type: V
F
<
0.45 V, I
R
<
100
µA
•
Allowing to rectify under (I
F(AV)
= 1 A) condition
1.9
±
0.2
+
0.2
I
Features
1
3
2
0.95
1.45
1.1
−
0.1
+
0.2
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Non-repetitive peak forward
surge current
*1
Average forward current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
FSM
I
F(AV)
T
j
T
stg
Rating
20
25
3
1.0
125
−55
to
+125
Unit
V
V
A
A
°C
°C
1 : Anode
2 : NC
3 : Cathode
Mini Type Package (3-pin)
Marking Symbol: M5N
Internal Connection
1
3
2
Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2 : With a alumina PC board
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Symbol
I
R
V
F
C
t
V
R
= 20 V
I
F
= 1.0 A
V
R
= 0 V, f = 1 MHz
120
Conditions
Min
Typ
Max
100
0.45
Unit
µA
V
pF
Note) Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
0 to 0.1
0.1 to 0.3
0.4
±
0.2
0.8
0.16
−
0.06
+
0.1
0.4
−
0.05
+
0.1
1